NSM80100MT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

150MHz

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks

Power - Max :

270mW

Number of Terminations :

6

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 1V

Surface Mount :

yes

Lead Free :

Lead Free

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Transistor Application :

SWITCHING

hFE Min :

120

Mounting Type :

Surface Mount

Terminal Position :

Dual

Package / Case :

SC-74, SOT-457

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Power Dissipation :

270mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Collector Emitter Breakdown Voltage :

80V

Current - Collector Cutoff (Max) :

100nA

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Published :

2013

Collector Emitter Voltage (VCEO) :

250mV

Transition Frequency :

150MHz

Number of Elements :

1

Terminal Form :

Gull wing

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

-4V

Terminal Finish :

Tin (Sn)