NSL12AWT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Base Voltage (VCBO) :

12V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

290mV @ 20mA, 1A

Collector Emitter Breakdown Voltage :

12V

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

12V

Gain Bandwidth Product :

100MHz

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Power Dissipation :

650mW

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Length :

6.35mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Max Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Max Power Dissipation :

450mW

Weight :

4.535924g

Number of Elements :

1

Voltage - Rated DC :

-12V

Element Configuration :

Single

Power - Max :

450mW

Height :

6.35mm

Current Rating :

-3A

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2002

Width :

6.35mm

Pin Count :

6

Frequency :

100MHz

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 800mA 1.5 V

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA

Polarity/Channel Type :

PNP

Base Part Number :

NSL12A

Lead Free :

Lead Free

hFE Min :

100

ECCN Code :

EAR99

Max Collector Current :

2A

Collector Emitter Saturation Voltage :

-170mV

Number of Terminations :

6