NSB8ATHE3_B/I
- Mfr.Part #
- NSB8ATHE3_B/I
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- DIODE GEN PURP 50V 8A TO263AB
- Stock
- 6,670
- In Stock :
- 6,670
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- Manufacturer :
- Vishay
- Product Category :
- Diodes - Rectifiers - Single
- Peak Reverse Repetitive Voltage (V) :
- 50
- Series :
- NSB8
- Minimum Operating Temperature (°C) :
- -55
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Current - Average Rectified (Io) :
- 8A
- Peak Non-Repetitive Surge Current (A) :
- 125
- Base Product Number :
- NSB8
- Voltage - DC Reverse (Vr) (Max) :
- 50 V
- Product Status :
- Active
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Diode Type :
- Standard
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Package :
- Tape and Reel (TR)
- Package Length :
- 10.45(Max)
- ECCN (US) :
- EAR99
- Maximum Continuous Forward Current (A) :
- 8
- Product :
- Rectifiers
- Supplier Device Package :
- TO-263AB (D²PAK)
- Manufacturer :
- Vishay
- Maximum DC Reverse Voltage (V) :
- 50
- Mounting Type :
- Surface Mount
- Package Width :
- 9.14(Max)
- Subcategory :
- Diodes and Rectifiers
- Package Height :
- 4.83(Max)
- Supplier Temperature Grade :
- Automotive
- Peak Forward Voltage (V) :
- 1.1
- Packaging :
- Tape and Reel
- Peak Reverse Current (uA) :
- 10
- Maximum Operating Temperature (°C) :
- 150
- Military :
- No
- Qualification :
- AEC-Q101
- PCB changed :
- 2
- Configuration :
- Single Dual Cathode
- Tab :
- Tab
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 8 A
- Brand :
- Vishay General Semiconductor
- Product Type :
- Rectifiers
- Current - Reverse Leakage @ Vr :
- 10 µA @ 50 V
- Pin Count :
- 3
- AEC Qualified Number :
- AEC-Q101
- Mounting :
- Surface Mount
- Product Category :
- Rectifiers
- Supplier Package :
- D2PAK
- Capacitance @ Vr, F :
- 55pF @ 4V, 1MHz
- RoHS :
- Details
- Datasheets
- NSB8ATHE3_B/I

Standard 55pF @ 4V, 1MHz Tape and Reel TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NSB8ATHE3_B/I Overview
According to the datasheets, the peak forward voltage is 1.1.The maximum continuous forward current that this device consumes at any given time is about 8.A DC reverse voltage less than 50 must be used for operation.
NSB8ATHE3_B/I Features
the forward peak voltage is 1.1
NSB8ATHE3_B/I Applications
There are a lot of Vishay
NSB8ATHE3_B/I applications of RF diodes.
- Sensor interfaces of security systems
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NSB8AT-E3/45 | Vishay | 17,982 | DIODE GEN PURP 50V 8A TO263AB |
| NSB8AT-E3/81 | Vishay | 7,547 | DIODE GEN PURP 50V 8A TO263AB |
| NSB8ATHE3/45 | Vishay | 5,474 | DIODE GEN PURP 50V 8A TO263AB |
| NSB8ATHE3/81 | Vishay | 25,473 | DIODE GEN PURP 50V 8A TO263AB |
| NSB8ATHE3_B/P | Vishay | 21,879 | DIODE GEN PURP 50V 8A TO263AB |
| NSB8BT-E3/45 | Vishay | 2,740 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8BT-E3/81 | Vishay | 20,644 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8BTHE3/45 | Vishay | 28,961 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8BTHE3/81 | Vishay | 29,155 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8BTHE3_B/I | Vishay | 48,449 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8BTHE3_B/P | Vishay | 13,832 | DIODE GEN PURP 100V 8A TO263AB |
| NSB8DT-E3/45 | Vishay | 6,901 | DIODE GEN PURP 200V 8A TO263AB |
| NSB8DT-E3/81 | Vishay | 5,197 | DIODE GEN PURP 200V 8A TO263AB |
| NSB8DTHE3/45 | Vishay | 16,752 | DIODE GEN PURP 200V 8A TO263AB |
| NSB8DTHE3/81 | Vishay | 29,775 | DIODE GEN PURP 200V 8A TO263AB |
















