NS2029M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Published :

2007

Terminal Form :

Flat

Number of Pins :

3

Max Power Dissipation :

265mW

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-723

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

140MHz

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

265mW

Terminal Finish :

Tin (Sn)

Transition Frequency :

140MHz

Lead Free :

Lead Free

Frequency :

140MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Transistor Element Material :

SILICON

Max Collector Current :

100mA

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

AMPLIFIER

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Terminal Position :

Dual

Factory Lead Time :

8 Weeks

Surface Mount :

yes

Collector Base Voltage (VCBO) :

60V