NS2029M3T5G
- Mfr.Part #
- NS2029M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SOT723
- Stock
- 200,480
- In Stock :
- 200,480
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 140MHz
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 265mW
- Published :
- 2007
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Power Dissipation :
- 265mW
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 140MHz
- Package / Case :
- SOT-723
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- PNP
- Frequency :
- 140MHz
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Datasheets
- NS2029M3T5G
NS2029M3T5G Documents

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
NS2029M3T5G Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 140MHz.The maximum collector current is 100mA volts.
NS2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NS2029M3T5G Applications
There are a lot of ON Semiconductor
NS2029M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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