NJVNJD35N04T4G
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- Mfr.Part #
- NJVNJD35N04T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 4A DPAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gain Bandwidth Product :
- 90MHz
- Factory Lead Time :
- 22 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 350V
- hFE Min :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 90MHz
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Base Part Number :
- NJD35N04
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 20mA, 2A
- Power Dissipation :
- 45W
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Surface Mount :
- yes
- Max Collector Current :
- 4A
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 700V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 350V
- Continuous Collector Current :
- 4A
- Pin Count :
- 3
- Max Power Dissipation :
- 45W
- Published :
- 2007
- Datasheets
- NJVNJD35N04T4G
NPN - Darlington -65°C~150°C TJ 50μA TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVNJD35N04T4G Overview
In this device, the DC current gain is 2000 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 20mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 90MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NJVNJD35N04T4G Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 90MHz
NJVNJD35N04T4G Applications
There are a lot of ON Semiconductor
NJVNJD35N04T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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