NE5517DR2G

Manufacturer :

onsemi

Product Category :

Instrumentation, OP Amps, Buffer Amps

Voltage - Input Offset :

400μV

Radiation Hardening :

No

Pin Count :

16

Supply Current-Max :

4mA

Packaging :

Tape and Reel (TR)

Power Supplies :

+-15V

Unity Gain BW-Nom :

2000 kHz

Nominal Gain Bandwidth Product :

2MHz

Number of Pins :

16

Number of Terminations :

16

Contact Plating :

Tin

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Number of Functions :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Neg Supply Voltage-Nom (Vsup) :

-15V

Length :

10mm

Supply Voltage :

15V

Base Part Number :

NE5517

RoHS Status :

ROHS3 Compliant

Low-Offset :

No

Operating Temperature :

0°C~70°C

Supply Type :

Dual, Single

Lead Free :

Lead Free

Operating Supply Voltage :

30V

Voltage - Supply, Single/Dual (±) :

4V~44V ±2V~22V

Current - Input Bias :

400nA

Average Bias Current-Max (IIB) :

8μA

Output Current :

350μA

Surface Mount :

yes

Max Input Voltage :

-3V

Number of Circuits :

2

Operating Supply Current :

2.6mA

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Weight :

665.986997mg

ECCN Code :

EAR99

Width :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Bias Current-Max (IIB) @25C :

5μA

Output Type :

Push-Pull

Common Mode Rejection Ratio :

80 dB

Amplifier Type :

Transconductance

Factory Lead Time :

2 Weeks

Slew Rate :

50V/μs

Power Dissipation :

1.125W

Pbfree Code :

yes

Height :

1.5mm

Output Current per Channel :

650μA

Input Offset Voltage (Vos) :

5mV

Frequency Compensation :

yes

Published :

2006

Terminal Form :

Gull wing

Max Power Dissipation :

1.125W

Packing Method :

Tape and Reel