NE5517DR2G

Manufacturer :

onsemi

Product Category :

Instrumentation, OP Amps, Buffer Amps

Width :

4mm

Lead Free :

Lead Free

Bias Current-Max (IIB) @25C :

5μA

JESD-609 Code :

e3

Height :

1.5mm

Nominal Gain Bandwidth Product :

2MHz

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Supply Type :

Dual, Single

Unity Gain BW-Nom :

2000 kHz

Supply Current-Max :

4mA

Operating Supply Voltage :

30V

Output Type :

Push-Pull

Mounting Type :

Surface Mount

Max Power Dissipation :

1.125W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Gull wing

Number of Functions :

2

Current - Input Bias :

400nA

Voltage - Input Offset :

400μV

Base Part Number :

NE5517

Common Mode Rejection Ratio :

80 dB

Time@Peak Reflow Temperature-Max (s) :

40

Number of Circuits :

2

Frequency Compensation :

yes

Operating Temperature :

0°C~70°C

Radiation Hardening :

No

Length :

10mm

Voltage - Supply, Single/Dual (±) :

4V~44V ±2V~22V

Packaging :

Tape and Reel (TR)

Output Current :

350μA

Contact Plating :

Tin

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Number of Terminations :

16

Pin Count :

16

Surface Mount :

yes

Number of Pins :

16

Neg Supply Voltage-Nom (Vsup) :

-15V

Max Input Voltage :

-3V

Number of Elements :

2

ECCN Code :

EAR99

Packing Method :

Tape and Reel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Power Supplies :

+-15V

Power Dissipation :

1.125W

Amplifier Type :

Transconductance

Low-Offset :

No

Average Bias Current-Max (IIB) :

8μA

Factory Lead Time :

2 Weeks

Operating Supply Current :

2.6mA

Pbfree Code :

yes

Published :

2006

Weight :

665.986997mg

Output Current per Channel :

650μA

Slew Rate :

50V/μs

Input Offset Voltage (Vos) :

5mV

Supply Voltage :

15V