NE3210S01
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- Mfr.Part #
- NE3210S01
- Manufacturer
- CEL (California Eastern Laboratories)
- Package / Case
- 4-SMD
- Datasheet
- Download
- Description
- FET RF 4V 12GHZ S01
- Stock
- 49,460
- In Stock ：
- 49,460
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- Manufacturer :
- CEL (California Eastern Laboratories)
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Case Connection :
- SOURCE
- Operating Mode :
- Depletion Mode
- Gate to Source Voltage (Vgs) :
- -3V
- Drain to Source Breakdown Voltage :
- 4V
- Additional Feature :
- High Reliability
- Packaging :
- Strip
- Voltage - Test :
- 2V
- Max Operating Temperature :
- 125°C
- Mount :
- Surface Mount
- Configuration :
- Single
- Radiation Hardening :
- No
- JESD-30 Code :
- O-PRDB-G4
- Current - Test :
- 10mA
- Package / Case :
- 4-SMD
- FET Technology :
- HETERO-JUNCTION
- Current Rating :
- 15mA
- Drain to Source Voltage (Vdss) :
- 4V
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 70mA
- Number of Terminations :
- 4
- Pin Count :
- 4
- Power Dissipation :
- 165mW
- Frequency :
- 12GHz
- Number of Elements :
- 1
- Min Operating Temperature :
- -65°C
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 165mW
- ECCN Code :
- EAR99
- Transistor Type :
- HFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Noise Figure :
- 0.35dB
- Terminal Position :
- Radial
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 1
- Gain :
- 13.5dB
- Datasheets
- NE3210S01
NE3210S01 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from CEL stock available at
The CEL Transistors NE3210S01 is a FET (Field Effect Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a three-terminal device with a gate, source, and drain. It is a unipolar device, meaning that it only conducts current in one direction. It is also a voltage-controlled device, meaning that the current flow is controlled by the voltage applied to the gate.
The CEL Transistors NE3210S01 is suitable for use in a variety of applications, including RF amplifiers, mixers, oscillators, and other high frequency applications. It is also suitable for use in low noise and high gain applications. It is also suitable for use in low power applications, as it has a low power consumption of only 0.5 mW.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NE3210S01-T1B | CEL (California Eastern Laboratories) | 46,912 | FET RF 4V 12GHZ S01 |
| NE3225NP35 | CEL (California Eastern Laboratories) | 968 | NEO MAGNET .32O.D.X0.25"T N35 |
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