N74F10N,602

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Mfr.Part #
N74F10N,602
Manufacturer
NXP Semiconductors
Package / Case
14-DIP (0.300, 7.62mm)
Datasheet
Download
Description
IC GATE NAND 3CH 3-INP 14DIP
Stock
47,135
In Stock :
47,135

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Manufacturer :
NXP Semiconductors
Product Category :
Gates and Inverters
Current - Output High, Low :
1mA 20mA
Height Seated (Max) :
4.2mm
Mounting Type :
Through Hole
Logic Level - Low :
0.8V
Number of Terminations :
14
Number of Circuits :
3
Power Supply Current-Max (ICC) :
7.7mA
Pin Count :
14
Max I(ol) :
0.02 A
Length :
19.025mm
Width :
7.62mm
Supply Voltage-Min (Vsup) :
4.5V
Published :
1999
Terminal Finish :
NICKEL PALLADIUM GOLD
Power Supplies :
5V
Number of Functions :
3
JESD-30 Code :
R-PDIP-T14
Schmitt Trigger :
No
Max Propagation Delay @ V, Max CL :
5ns @ 5V, 50pF
Packaging :
Tube
Surface Mount :
No
Logic Level - High :
2V
Prop. Delay@Nom-Sup :
6 ns
Propagation Delay (tpd) :
6 ns
Peak Reflow Temperature (Cel) :
260
Qualification Status :
Not Qualified
Base Part Number :
74F10
Number of Inputs :
3
Terminal Pitch :
2.54mm
Load Capacitance :
50pF
Logic Type :
NAND Gate
JESD-609 Code :
e4
Series :
74F
Package / Case :
14-DIP (0.300, 7.62mm)
Supply Voltage :
5V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Family :
F/FAST
Time@Peak Reflow Temperature-Max (s) :
30
Operating Temperature :
0°C~70°C
Terminal Position :
Dual
Voltage - Supply :
4.5V~5.5V
Supply Voltage-Max (Vsup) :
5.5V
Introducing Gates and Inverters NXP Semiconductors N74F10N,602 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:14, Base Part Number:74F10, Package / Case:14-DIP (0.300, 7.62mm), Operating Temperature:0°C~70°C, N74F10N,602 pinout, N74F10N,602 datasheet PDF, N74F10N,602 amp .Beyond Gates and Inverters NXP Semiconductors N74F10N,602 ,we also offer 74AHC08BQ,115, HEF4093BT,653, HEF4093BT,652, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors N74F10N,602


Gates and Inverters NXP Semiconductors N74F10N,602 Overview

Introducing the N74F10N,602 from NXP Semiconductors, a cutting-edge IC gate NAND 3CH 3INP 14DIP solution designed to meet the demands of modern electronic circuits. This highly reliable integrated circuit offers exceptional performance and versatility, making it an ideal choice for a wide range of applications.

Featuring advanced technology and precision engineering, the N74F10N,602 delivers seamless operation and consistent results, ensuring optimal functionality in diverse electronic systems. Whether you're designing consumer electronics, industrial equipment, or telecommunications devices, this innovative IC provides the reliability and performance you need to stay ahead in today's competitive market.

With its compact design and industry-leading specifications, the N74F10N,602 sets a new standard for gate and inverter ICs, offering unparalleled efficiency and performance for your electronic projects.

N74F10N,602 Features

  • High-performance IC gate NAND 3CH 3INP 14DIP
  • Advanced technology for superior reliability and functionality
  • Compact and versatile design for easy integration into various electronic systems
  • Wide operating temperature range for flexibility in different environments
  • Low power consumption for energy-efficient operation
  • Industry-leading specifications for optimal performance

N74F10N,602 Applications

  • Consumer Electronics: The N74F10N,602 is perfect for use in smartphones, tablets, and multimedia devices, providing essential gate and inverter functions for seamless operation and enhanced user experiences.
  • Industrial Equipment: With its rugged design and high reliability, this IC is well-suited for industrial control systems, automation equipment, and machinery, ensuring stable performance in demanding environments.
  • Telecommunications Devices: From routers and switches to network infrastructure equipment, the N74F10N,602 offers reliable signal processing and data management capabilities, facilitating efficient communication and connectivity.
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