MX25U12835FZNJ-13G
- Mfr.Part #
- MX25U12835FZNJ-13G
- Manufacturer
- Macronix
- Package / Case
- 8-WDFN Exposed Pad
- Datasheet
- Download
- Description
- IC FLASH 128MBIT SPI/QUAD 8WSON
- Stock
- 7,176
- In Stock :
- 7,176
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- Manufacturer :
- Macronix
- Product Category :
- Memory
- Terminal Form :
- NO LEAD
- Number of Terminals :
- 8
- Programming Voltage :
- 1.8 V
- Seated Height-Max :
- 0.8 mm
- Width :
- 5 mm
- Memory Type :
- Non-Volatile
- Product Status :
- Not For New Designs
- Number of Functions :
- 1
- Manufacturer :
- Macronix International Co Ltd
- Surface Mount :
- yes
- Package Shape :
- RECTANGULAR
- Terminal Pitch :
- 1.27 mm
- Temperature Grade :
- Industrial
- Memory Interface :
- SPI - Quad I/O, QPI
- Package / Case :
- 8-WDFN Exposed Pad
- Supply Voltage-Max (Vsup) :
- 2 V
- JESD-30 Code :
- R-PDSO-N8
- Supply Voltage-Min (Vsup) :
- 1.65 V
- Alternate Memory Width :
- 2
- Package :
- Tray
- Memory Size :
- 128Mbit
- Operating Mode :
- SYNCHRONOUS
- Additional Feature :
- ALSO ORGANISED AS 128M X1
- Length :
- 6 mm
- Reach Compliance Code :
- Unknown
- Technology :
- FLASH - NOR
- Operating Temperature :
- -40°C ~ 105°C (TA)
- Memory Format :
- Flash
- Number of Words :
- 33554432 words
- Supplier Device Package :
- 8-WSON (6x5)
- Clock Frequency :
- 75 MHz
- Terminal Position :
- Dual
- Memory Organization :
- 16M x 8
- Memory Width :
- 4
- Base Product Number :
- MX25U12835
- Factory Lead Time :
- 16 Weeks
- Organization :
- 32MX4
- Memory Density :
- 134217728 bit
- Voltage - Supply :
- 1.65V ~ 2V
- Mounting Type :
- Surface Mount
- Write Cycle Time - Word, Page :
- 30µs, 3ms
- Memory IC Type :
- Flash
- Parallel/Serial :
- Serial
- Series :
- MX25xxx35/36 - MXSMIO™
- Datasheets
- MX25U12835FZNJ-13G

Memory Macronix MX25U12835FZNJ-13G Overview
Offering an ideal data storage solution for embedded systems, the Memory Macronix MX25U12835FZNJ-13G is a top-of-the-line Flash memory IC designed by Macronix. With a capacious 128Mbit storage size, it caters to the increasing demands for high-density memory in today’s sophisticated electronic environments. Engineered for reliability and
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