MX25L8006EM1I-12G

Manufacturer :

Macronix

Product Category :

Memory

JESD-609 Code :

e3

Voltage - Supply :

2.7V~3.6V

Write Cycle Time - Word, Page :

50μs, 3ms

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

SYNCHRONOUS

Operating Temperature :

-40°C~85°C TA

Factory Lead Time :

16 Weeks

Memory Width :

2

Terminal Pitch :

1.27mm

Memory Type :

Non-Volatile

Serial Bus Type :

SPI

Organization :

4MX2

Operating Supply Voltage :

3.6V

Alternate Memory Width :

1

RoHS Status :

ROHS3 Compliant

Write Protection :

HARDWARE/SOFTWARE

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Power Supplies :

3/3.3V

Supply Current-Max :

0.02mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Width :

3.9mm

Supply Voltage-Min (Vsup) :

2.7V

Memory Size :

8Mb 1M x 8

Programming Voltage :

2.7V

HTS Code :

8542.32.00.51

Data Retention Time-Min :

20

Standby Current-Max :

0.00001A

Surface Mount :

yes

Interface :

SPI, Serial

Pin Count :

8

Memory Format :

Flash

Mounting Type :

Surface Mount

Number of Terminations :

8

Packaging :

Tube

ECCN Code :

EAR99

Memory Interface :

SPI

Number of Functions :

1

Published :

2010

Height Seated (Max) :

1.75mm

Clock Frequency :

86MHz

Length :

4.9mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3V

Endurance :

100000 Write/Erase Cycles

Series :

MX25xxx05/06

Density :

8 Mb

JESD-30 Code :

R-PDSO-G8