MURS110T3G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

HTS Code :

8541.10.00.80

Forward Voltage :

875mV

Published :

2006

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Application :

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Pin Count :

2

Forward Current :

2A

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Reverse Recovery Time :

35 ns

Average Rectified Current :

2A

Element Configuration :

Single

Additional Feature :

FREE WHEELING DIODE

Width :

3.95mm

Current - Reverse Leakage @ Vr :

2μA @ 100V

Max Reverse Voltage (DC) :

100V

Halogen Free :

Halogen Free

Peak Reverse Current :

2µA

REACH SVHC :

No SVHC

Reverse Voltage :

100V

Terminal Form :

C BEND

Diode Type :

Standard

Recovery Time :

35 ns

Output Current :

1A

Peak Non-Repetitive Surge Current :

40A

Pbfree Code :

yes

Max Forward Surge Current (Ifsm) :

40A

Terminal Position :

Dual

Max Repetitive Reverse Voltage (Vrrm) :

100V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

2

Base Part Number :

MURS110

Contact Plating :

Tin

Package / Case :

DO-214AA, SMB

Peak Reflow Temperature (Cel) :

260

Number of Pins :

2

Voltage - Rated DC :

100V

Surface Mount :

yes

Max Surge Current :

40A

Factory Lead Time :

6 Weeks

Height :

2.27mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

1A

Diode Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

175°C

Voltage - Forward (Vf) (Max) @ If :

875mV @ 1A

Length :

4.6mm

Operating Temperature - Junction :

-65°C~175°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type :

Surface Mount

Number of Phases :

1