MURF20010R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Reverse Recovery Time :

75 ns

Published :

2013

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C~150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Output Current-Max :

100A

Current - Reverse Leakage @ Vr :

25μA @ 50V

Average Rectified Current :

200A

ECCN Code :

EAR99

Diode Type :

Standard

Non-rep Pk Forward Current-Max :

2000A

Diode Configuration :

1 Pair Common Anode

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

HTS Code :

8541.10.00.80

Max Reverse Voltage (DC) :

100V

Terminal Position :

UPPER

Peak Reverse Current :

25μA

JESD-30 Code :

R-PUFM-X2

RoHS Status :

RoHS Compliant

Package / Case :

TO-244AB

Reverse Voltage :

100V

Operating Temperature (Max) :

150°C

Number of Terminations :

2

Current - Average Rectified (Io) :

200A DC

Application :

SUPER FAST RECOVERY

Element Configuration :

Common Anode

Number of Phases :

1

Voltage - Forward (Vf) (Max) @ If :

1.3V @ 100A

Factory Lead Time :

4 Weeks

Packaging :

Bulk

Diode Element Material :

SILICON

Max Surge Current :

800A

Mount :

Chassis Mount

Number of Elements :

2

Terminal Form :

UNSPECIFIED