MT52L256M32D1PF-093 WT:B

Memory Micron Technology MT52L256M32D1PF-093 WT:B Overview

The Memory Micron Technology MT52L256M32D1PF-093 WT:B is an integrated circuit specifically designed for high-performance applications requiring substantial data bandwidth and high-speed memory access. Manufactured by Micron Technology, this IC utilizes advanced DRAM technology to deliver an impressive 8 Gigabits of storage with a speed of 1067 MHz, packaged neatly in a 178-ball fine pitch ball grid array (FBGA). Its robust design and efficient data handling capabilities make it ideal for use in a variety of demanding applications, providing reliability and high capacity where it matters most.

MT52L256M32D1PF-093 WT:B Features

• High Density: 8 Gigabit of dynamic random-access memory (DRAM).
• High Speed: Operates at 1067 MHz, enabling quick data processing and reduced latency.
• Compact Form Factor: Utilizes a 178FBGA package, ensuring compactness and ease of integration in space-constrained environments.
• Energy Efficient: Designed for reduced power consumption, which is critical in high-performance computing and mobile applications.

MT52L256M32D1PF-093 WT:B Applications

• Smartphones and Tablets: Provides the necessary speed and capacity for multitasking and media consumption, enhancing user experience.
• Personal Computing: Integral for systems requiring high-bandwidth memory to handle intensive programs and multitasking smoothly.
• Networking Equipment: Supports high-speed data transmission and efficient handling of large data loads in routers and switches.
• Gaming Consoles: Ensures fast load times and smooth gameplay, essential for modern gaming experiences.
• Server and Data Center: Offers robust memory solutions that improve server responsiveness and manage large volumes of data efficiently.