MT48V8M32LFF5-8
- Mfr.Part #
- MT48V8M32LFF5-8
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 90VFBGA
- Stock
- 32,227
- In Stock :
- 32,227
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Additional Feature :
- AUTO/SELF REFRESH
- Mount :
- Surface Mount
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Length :
- 13mm
- Density :
- 256 Mb
- Supply Voltage :
- 2.5V
- Refresh Cycles :
- 4096
- Memory Format :
- DRAM
- Number of Functions :
- 1
- HTS Code :
- 8542.32.00.24
- Supply Voltage-Min (Vsup) :
- 2.3V
- Memory Interface :
- Parallel
- Address Bus Width :
- 14b
- Supply Voltage-Max (Vsup) :
- 2.7V
- Terminal Position :
- BOTTOM
- Standby Current-Max :
- 0.00001A
- Power Supplies :
- 2.5V
- Clock Frequency :
- 125MHz
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Width :
- 32
- Package / Case :
- 90-VFBGA
- ECCN Code :
- EAR99
- Memory Type :
- Volatile
- Voltage - Supply :
- 2.3V~2.7V
- Access Time :
- 7ns
- Published :
- 2005
- Pin Count :
- 90
- Number of Terminations :
- 90
- Number of Pins :
- 90
- Write Cycle Time - Word, Page :
- 15ns
- Base Part Number :
- MT48V8M32
- I/O Type :
- COMMON
- Operating Supply Voltage :
- 3.3V
- Sequential Burst Length :
- 1248FP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Interleaved Burst Length :
- 1248
- Lead Free :
- Contains Lead
- Height Seated (Max) :
- 1mm
- JESD-609 Code :
- e0
- Nominal Supply Current :
- 125mA
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tray
- Operating Temperature :
- 0°C~70°C TA
- Operating Mode :
- SYNCHRONOUS
- Memory Size :
- 256Mb 8M x 32
- Organization :
- 8MX32
- Qualification Status :
- Not Qualified
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 235
- Datasheets
- MT48V8M32LFF5-8

Memory Micron Technology MT48V8M32LFF5-8 Overview
The Memory Micron Technology MT48V8M32LFF5-8 IC DRAM exemplifies cutting-edge memory technology tailored for demanding applications that require high-speed data processing and storage. With its 256Mbit density and a sophisticated 90VFBGA package, this DRAM integrated circuit ensures reliable and high-performance data handling capabilities, essential for modern electronic systems. Its compact footprint and low power consumption make it an ideal solution for manufacturers looking to optimize their hardware for both efficiency and cost-effectiveness, thereby attracting B2B customers seeking to enhance their products with top-tier memory components.
MT48V8M32LFF5-8 Features
This DRAM module offers several notable features including its parallel interface, which provides quick data transfer rates that are crucial for high-performance computing environments. The 256Mbit capacity allows for substantial data storage within a compact 90VFBGA package, enhancing device miniaturization without compromising performance. Additionally, its operational efficiency is highlighted by its compatibility with a wide range of operating temperatures, making it a versatile choice for diverse electronic applications.
MT48V8M32LFF5-8 Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets to manage multiple applications simultaneously without sacrificing speed or performance.
- Automotive Systems: Integrated into infotainment and advanced driver-assistance systems (ADAS) where fast data retrieval and storage are critical for real-time performance.
- Networking Equipment: Employs in routers and switches to enhance data flow management capabilities essential for maintaining system integrity and preventing bottlenecks.
- Industrial Automation: Applied in machinery control systems to ensure smooth and efficient operation, handling complex computations and data logging.
- Computing: Key component in PCs and servers, where it supports extensive multitasking and aids in maintaining optimal efficiency during high-load conditions.
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