MT48V8M16LFF4-8 XT:G
- Mfr.Part #
- MT48V8M16LFF4-8 XT:G
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 3,080
- In Stock :
- 3,080
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Operating Mode :
- SYNCHRONOUS
- Pbfree Code :
- No
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Terminal Finish :
- TIN LEAD SILVER
- Width :
- 8mm
- Memory Interface :
- Parallel
- Terminal Pitch :
- 0.8mm
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Package / Case :
- 54-VFBGA
- Memory Type :
- Volatile
- Surface Mount :
- yes
- Supply Voltage-Max (Vsup) :
- 2.7V
- Voltage - Supply :
- 2.3V~2.7V
- Memory Width :
- 16
- Operating Temperature :
- -20°C~75°C TA
- Number of Terminations :
- 54
- Reach Compliance Code :
- not_compliant
- Standby Current-Max :
- 0.00045A
- Supply Current-Max :
- 0.21mA
- Clock Frequency :
- 125MHz
- Sequential Burst Length :
- 1248FP
- Qualification Status :
- Not Qualified
- Length :
- 8mm
- Organization :
- 8MX16
- Refresh Cycles :
- 4096
- Power Supplies :
- 1.8/2.52.5V
- Memory Format :
- DRAM
- JESD-30 Code :
- S-PBGA-B54
- Access Time :
- 7ns
- I/O Type :
- COMMON
- Pin Count :
- 54
- Additional Feature :
- AUTO/SELF REFRESH
- Write Cycle Time - Word, Page :
- 15ns
- Peak Reflow Temperature (Cel) :
- 235
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Density :
- 134217728 bit
- Packaging :
- Box
- Height Seated (Max) :
- 1mm
- Supply Voltage :
- 2.5V
- Memory Size :
- 128Mb 8M x 16
- HTS Code :
- 8542.32.00.02
- Number of Functions :
- 1
- Output Characteristics :
- 3-STATE
- Interleaved Burst Length :
- 1248
- Supply Voltage-Min (Vsup) :
- 2.3V
- JESD-609 Code :
- e0
- Base Part Number :
- MT48V8M16
- Terminal Position :
- BOTTOM
- Datasheets
- MT48V8M16LFF4-8 XT:G

Memory Micron Technology MT48V8M16LFF4-8 XT:G Overview
The Memory Micron Technology MT48V8M16LFF4-8 XT:G is a cutting-edge IC DRAM offering from Micron Technology, specifically designed for high-performance data storage and management. This dynamic random-access memory (DRAM) component boasts a storage capacity of 128Mbit, packaged in a compact 54-pin VFBGA configuration. It is engineered to deliver high-speed data transmission and low power consumption, making it ideal for advanced computing and digital applications that demand robust memory solutions.
MT48V8M16LFF4-8 XT:G Features
This DRAM module is notable for its parallel interface, which allows for faster data access and throughput, enhancing overall system responsiveness. The device operates at a voltage of 3.3V, providing a balance between power efficiency and performance. The MT48V8M16LFF4-8 XT:G is also characterized by its extended temperature range, making it suitable for use in environments where thermal reliability is crucial.
MT48V8M16LFF4-8 XT:G Applications
- Consumer Electronics: Utilized in smartphones, tablets, and gaming consoles to manage rapid data access and enhance user experience.
- Computing Systems: Integral for laptops and desktops requiring efficient memory for multitasking and high-performance tasks.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) to process large amounts of data from sensors and cameras reliably.
- Industrial Automation: Essential in machinery and production line equipment where fast data processing and durability under harsh conditions are required.
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