MT48V8M16LFB4-10:G

Manufacturer :

Micron Technology

Product Category :

Memory

Packaging :

Box

Access Time :

7ns

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

2.7V

Memory Format :

DRAM

ECCN Code :

EAR99

Operating Supply Voltage :

2.5V

Radiation Hardening :

No

Data Bus Width :

16b

Memory Type :

Volatile

Number of Functions :

1

Supply Voltage-Min (Vsup) :

2.3V

Interleaved Burst Length :

1248

Number of Terminations :

54

Surface Mount :

yes

Lead Free :

Lead Free

Operating Temperature :

0°C~70°C TA

Memory Size :

128Mb 8M x 16

Published :

2007

Standby Current-Max :

0.00045A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Ports :

1

Terminal Pitch :

0.8mm

Voltage - Supply :

2.3V~2.7V

Memory Width :

16

Output Characteristics :

3-STATE

Terminal Position :

BOTTOM

Address Bus Width :

14b

Number of Pins :

54

JESD-609 Code :

e1

Refresh Cycles :

4096

Peak Reflow Temperature (Cel) :

260

Pin Count :

54

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

100MHz

Density :

128 Mb

Pbfree Code :

yes

Organization :

8MX16

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Supply Voltage :

2.5V

Base Part Number :

MT48V8M16

Sequential Burst Length :

1248FP

Additional Feature :

AUTO/SELF REFRESH

Supply Current-Max :

0.1mA

Memory Interface :

Parallel

Height Seated (Max) :

1mm

Terminal Finish :

TIN SILVER COPPER

Length :

8mm

I/O Type :

COMMON

Package / Case :

54-VFBGA