MT48V4M32LFF5-10:G
- Mfr.Part #
- MT48V4M32LFF5-10:G
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 18,703
- In Stock :
- 18,703
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Data Bus Width :
- 32b
- Length :
- 13mm
- Supply Voltage-Min (Vsup) :
- 2.3V
- Write Cycle Time - Word, Page :
- 15ns
- Sequential Burst Length :
- 1248FP
- JESD-609 Code :
- e0
- Address Bus Width :
- 14b
- Interleaved Burst Length :
- 1248
- Supply Voltage :
- 2.5V
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Ports :
- 1
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.00045A
- Pin Count :
- 90
- Access Time :
- 7ns
- Base Part Number :
- MT48V4M32
- Lead Free :
- Contains Lead
- Memory Format :
- DRAM
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 235
- Terminal Pitch :
- 0.8mm
- Memory Width :
- 32
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 0°C~70°C TA
- Memory Size :
- 128Mb 4M x 32
- Refresh Cycles :
- 4096
- Packaging :
- Box
- Nominal Supply Current :
- 110mA
- Mounting Type :
- Surface Mount
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 90
- Terminal Finish :
- TIN LEAD SILVER
- Number of Pins :
- 90
- I/O Type :
- COMMON
- Published :
- 2007
- Voltage - Supply :
- 2.3V~2.7V
- HTS Code :
- 8542.32.00.24
- ECCN Code :
- EAR99
- Supply Voltage-Max (Vsup) :
- 2.7V
- Output Characteristics :
- 3-STATE
- Clock Frequency :
- 100MHz
- Operating Supply Voltage :
- 2.5V
- Density :
- 128 Mb
- Radiation Hardening :
- No
- Height Seated (Max) :
- 1mm
- Organization :
- 8MX32
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Type :
- Volatile
- Package / Case :
- 90-VFBGA
- Number of Functions :
- 1
- Datasheets
- MT48V4M32LFF5-10:G

Memory Micron Technology MT48V4M32LFF5-10:G Overview
The Memory Micron Technology MT48V4M32LFF5-10:G is a high-performance 128Mbit DRAM integrated circuit, encapsulated in a compact 90VFBGA package. Designed by Micron Technology, a leader in advanced memory solutions, this product offers a balanced combination of density, speed, and power efficiency. Ideal for applications requiring substantial memory storage without compromising on performance, this DRAM module facilitates robust parallel processing capabilities which makes it exceptionally suitable for a wide range of industrial and commercial applications. Its reliability and high data throughput capabilities make it an excellent choice for businesses looking to enhance their technological infrastructure.
MT48V4M32LFF5-10:G Features
This DRAM IC excels in performance and utility with features including a large 128Mbit storage capacity, parallel interface for enhanced data transfer rates, and a compact 90VFBGA packaging that ensures a minimal footprint on system boards. Optimized for low-power consumption, it also supports a broad temperature range, making it adaptable to varying operational environments.
MT48V4M32LFF5-10:G Applications
- Consumer Electronics: Utilized in devices such as digital cameras and gaming consoles where high memory bandwidth and capacity are essential for user experience enhancement.
- Telecommunications: Applied in networking hardware like switches and routers, helping manage data flow efficiently across communication channels.
- Automotive Systems: Integrates into automotive infotainment systems, providing the necessary memory capacity for advanced vehicle user interfaces.
- Industrial Automation: Serves as a critical component in PLCs and industrial PCs where reliability and endurance are required for continuous factory operations.
- Medical Equipment: Used in medical imaging systems to store and process large volumes of complex data crucial for accurate diagnostics.
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