MT48V4M32LFB5-10:G
- Mfr.Part #
- MT48V4M32LFB5-10:G
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 16,208
- In Stock :
- 16,208
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 90
- Standby Current-Max :
- 0.00045A
- Length :
- 13mm
- Operating Temperature :
- 0°C~70°C TA
- Pin Count :
- 90
- Density :
- 128 Mb
- Refresh Cycles :
- 4096
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Supply Voltage-Max (Vsup) :
- 2.7V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Mounting Type :
- Surface Mount
- Height Seated (Max) :
- 1mm
- Operating Supply Voltage :
- 2.5V
- Terminal Position :
- BOTTOM
- Sequential Burst Length :
- 1248FP
- Surface Mount :
- yes
- Supply Voltage :
- 2.5V
- Number of Ports :
- 1
- Number of Terminations :
- 90
- Memory Width :
- 32
- Memory Format :
- DRAM
- Data Bus Width :
- 32b
- Base Part Number :
- MT48V4M32
- Output Characteristics :
- 3-STATE
- Voltage - Supply :
- 2.3V~2.7V
- Interleaved Burst Length :
- 1248
- Address Bus Width :
- 14b
- Packaging :
- Box
- Terminal Pitch :
- 0.8mm
- Additional Feature :
- AUTO/SELF REFRESH
- Package / Case :
- 90-VFBGA
- I/O Type :
- COMMON
- Access Time :
- 7ns
- ECCN Code :
- EAR99
- Clock Frequency :
- 100MHz
- Organization :
- 8MX32
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Write Cycle Time - Word, Page :
- 15ns
- Memory Type :
- Volatile
- Supply Voltage-Min (Vsup) :
- 2.3V
- HTS Code :
- 8542.32.00.24
- Lead Free :
- Lead Free
- Memory Size :
- 128Mb 4M x 32
- Supply Current-Max :
- 0.12mA
- Published :
- 2007
- Datasheets
- MT48V4M32LFB5-10:G

Memory Micron Technology MT48V4M32LFB5-10:G Overview
The Memory Micron Technology MT48V4M32LFB5-10:G is a high-performance DRAM IC that embodies cutting-edge technology ideal for a wide range of demanding applications. This 128Mbit DRAM is designed using Micron Technology's advanced manufacturing processes, providing a robust parallel interface packaged efficiently in a 90VFBGA format. It excels in delivering high-speed data transmission and low power consumption, making it an indispensable component for devices requiring rapid access to large volumes of data. The integration of such high-quality memory solutions ensures enhanced reliability and performance, which are critical in achieving superior device functionality and operational efficiency.
MT48V4M32LFB5-10:G Features
This IC DRAM from Micron Technology offers several key features that make it particularly suitable for high-demand systems. These include its large 128Mbit storage capacity, high data transfer rates, and the compact 90VFBGA packaging which allows for efficient space utilization on PCBs. Moreover, it operates at a standard voltage, enhancing compatibility with a variety of industrial and commercial applications while ensuring power efficiency.
MT48V4M32LFB5-10:G Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and gaming consoles where fast access to a large memory pool is essential for multitasking and high-performance graphics processing.
- Automotive Systems: Supports advanced automotive applications, including infotainment systems and driver assist technologies that require rapid data processing and robust memory capabilities.
- Industrial Automation: Ideal for use in complex industrial machines and automation systems that demand high-speed memory for real-time processing and control.
- Networking: Applied in routers and switches to manage memory-intensive tasks, buffering, and large-scale data processing efficiently.
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