MT48LC64M4A2TG-75 L:D
- Mfr.Part #
- MT48LC64M4A2TG-75 L:D
- Manufacturer
- Micron Technology
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 54TSOP II
- Stock
- 35,897
- In Stock :
- 35,897
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Density :
- 268435456 bit
- Mounting Type :
- Surface Mount
- Length :
- 22.22mm
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Refresh Cycles :
- 8192
- Memory Type :
- Volatile
- Memory Format :
- DRAM
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MT48LC64M4A2
- JESD-30 Code :
- R-PDSO-G54
- Qualification Status :
- Not Qualified
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Size :
- 256Mb 64M x 4
- Output Characteristics :
- 3-STATE
- Sequential Burst Length :
- 1248FP
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN LEAD
- Standby Current-Max :
- 0.002A
- Number of Terminations :
- 54
- Supply Voltage-Min (Vsup) :
- 3V
- Pbfree Code :
- No
- Terminal Position :
- Dual
- RoHS Status :
- Non-RoHS Compliant
- I/O Type :
- COMMON
- Peak Reflow Temperature (Cel) :
- 235
- Packaging :
- Box
- Pin Count :
- 54
- Interleaved Burst Length :
- 1248
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e0
- Memory Interface :
- Parallel
- Supply Current-Max :
- 0.27mA
- Operating Temperature :
- 0°C~70°C TA
- Supply Voltage :
- 3.3V
- Access Time :
- 5.4ns
- Number of Ports :
- 1
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage-Max (Vsup) :
- 3.6V
- Voltage - Supply :
- 3V~3.6V
- Write Cycle Time - Word, Page :
- 15ns
- Clock Frequency :
- 133MHz
- Published :
- 2007
- Height Seated (Max) :
- 1.2mm
- Power Supplies :
- 3.3V
- Width :
- 10.16mm
- Memory Width :
- 4
- Organization :
- 64MX4
- Terminal Pitch :
- 0.8mm
- HTS Code :
- 8542.32.00.24
- Number of Functions :
- 1
- Datasheets
- MT48LC64M4A2TG-75 L:D

Memory Micron Technology MT48LC64M4A2TG-75 L:D Overview
Explore the cutting-edge MT48LC64M4A2TG-75 L:D by Micron Technology, a leading name in integrated circuits. This IC DRAM 256MBIT PAR 54TSOP II offers unparalleled performance and reliability, making it the ideal choice for demanding applications in various industries.
MT48LC64M4A2TG-75 L:D Features
- High Capacity: With a storage capacity of 256MBIT, this DRAM chip ensures ample space for data storage and processing.
- Fast PAR Interface: The Parallel Address/Command Register (PAR) interface enables rapid communication between the memory and the controller, enhancing overall system efficiency.
- Compact Form Factor: Housed in a 54TSOP II package, this memory chip offers a compact footprint, ideal for space-constrained applications.
- Robust Design: Built with Micron Technology's rigorous quality standards, this IC DRAM delivers exceptional reliability and longevity.
- Wide Compatibility: Compatible with a range of systems and devices, this memory chip offers versatility for various applications.
MT48LC64M4A2TG-75 L:D Applications
- Embedded Systems: This DRAM chip is commonly used in embedded systems such as industrial control systems and IoT devices, where reliable performance and high data processing speeds are essential.
- Networking Equipment: Ideal for networking equipment such as routers, switches, and network interface cards, where fast and efficient data storage and retrieval are crucial for seamless connectivity.
- Telecommunications: In telecommunications infrastructure, including base stations and telecommunications switches, this memory chip ensures smooth operation and low latency communication.
- Consumer Electronics: From gaming consoles to smart appliances, this DRAM chip powers a wide range of consumer electronics, providing smooth multitasking and responsive performance.
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