MT48LC32M4A2P-7E:G
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- Mfr.Part #
- MT48LC32M4A2P-7E:G
- Manufacturer
- Micron Technology
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 54TSOP II
- Stock
- 38,964
- In Stock ：
- 38,964
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Operating Mode :
- SYNCHRONOUS
- Pin Count :
- 54
- Height Seated (Max) :
- 1.2mm
- Qualification Status :
- Not Qualified
- Memory Density :
- 134217728 bit
- Memory Format :
- DRAM
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 54
- Width :
- 10.16mm
- Supply Voltage-Min (Vsup) :
- 3V
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Number of Ports :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage :
- 3.3V
- Supply Current-Max :
- 0.33mA
- Write Cycle Time - Word, Page :
- 14ns
- Surface Mount :
- yes
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- JESD-609 Code :
- e3
- Length :
- 22.22mm
- Memory Interface :
- Parallel
- Voltage - Supply :
- 3V~3.6V
- Operating Supply Voltage :
- 3.3V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Terminal Pitch :
- 0.8mm
- Mounting Type :
- Surface Mount
- Clock Frequency :
- 133MHz
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage-Max (Vsup) :
- 3.6V
- Operating Temperature :
- 0°C~70°C TA
- Memory Size :
- 128Mb 32M x 4
- Base Part Number :
- MT48LC32M4A2
- Access Time :
- 5.4ns
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Width :
- 4
- Terminal Position :
- Dual
- Sequential Burst Length :
- 1248FP
- I/O Type :
- COMMON
- Organization :
- 32MX4
- HTS Code :
- 8542.32.00.02
- Refresh Cycles :
- 4096
- Pbfree Code :
- yes
- Standby Current-Max :
- 0.002A
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Published :
- 2007
- Packaging :
- Box
- JESD-30 Code :
- R-PDSO-G54
- Interleaved Burst Length :
- 1248
- Output Characteristics :
- 3-STATE
- Memory Type :
- Volatile
- Datasheets
- MT48LC32M4A2P-7E:G
Memory Micron Technology MT48LC32M4A2P-7E:G Overview
The Memory Micron Technology MT48LC32M4A2P-7E:G is a high-performance 128Mbit DRAM integrated circuit, meticulously crafted to meet the rigorous demands of sophisticated electronic systems. Developed by Micron Technology, this IC leverages advanced processing technology to achieve high-speed operation and stability. Its encapsulation in a 54-pin TSOP II package ensures robust physical protection and efficient space utilization, making it an ideal choice for densely packed circuit designs. The component's high data integrity and low power consumption make it exceptionally suited for applications requiring reliable, continuous data processing and storage, appealing directly to B2B customers looking to invest in bulk quantities for their high-tech solutions.
MT48LC32M4A2P-7E:G Features
This DRAM IC offers several key features that enhance its utility in a variety of demanding applications. It operates with a voltage of 3.3V, which optimizes power efficiency across system architectures. The access time is fast, facilitating quick read and write operations that are essential for performance-critical applications. Its low latency and high data bandwidth capabilities make it suitable for advanced computing environments where speed and reliability are paramount.
MT48LC32M4A2P-7E:G Applications
- Consumer Electronics: Utilized in devices such as digital cameras and gaming consoles, where fast access to large volumes of data is necessary for high-resolution imaging and smooth gameplay.
- Communication Systems: Employs in high-speed routers and switches to manage data flow efficiently across networks, enhancing connectivity and system reliability.
- Automotive Systems: Integral in advanced driver-assistance systems (ADAS) for processing and storing data from vehicle sensors, contributing to enhanced safety and performance.
- Industrial Automation: Used in control systems for real-time process management, ensuring timely and accurate handling of operations critical to industrial productivity.
- Computer Networking: Supports the backbone of enterprise-level servers and data centers that require robust memory solutions to handle large scale, complex computations and data storage.
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