MT48LC16M8A2FB-7E:G
- Mfr.Part #
- MT48LC16M8A2FB-7E:G
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 60FBGA
- Stock
- 36,791
- In Stock :
- 36,791
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Peak Reflow Temperature (Cel) :
- 235
- Pbfree Code :
- No
- Number of Functions :
- 1
- Access Time :
- 5.4ns
- Memory Interface :
- Parallel
- Density :
- 128 Mb
- Clock Frequency :
- 133MHz
- Standby Current-Max :
- 0.002A
- Memory Type :
- Volatile
- Memory Format :
- DRAM
- Supply Voltage-Min (Vsup) :
- 3V
- Pin Count :
- 60
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Number of Pins :
- 60
- Memory Size :
- 128Mb 16M x 8
- Operating Temperature :
- 0°C~70°C TA
- Number of Terminations :
- 60
- Organization :
- 16MX8
- HTS Code :
- 8542.32.00.02
- I/O Type :
- COMMON
- Supply Voltage :
- 3.3V
- Packaging :
- Box
- JESD-609 Code :
- e0
- Surface Mount :
- yes
- Refresh Cycles :
- 4096
- Radiation Hardening :
- No
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- Supply Current-Max :
- 0.33mA
- Package / Case :
- 60-FBGA
- Output Characteristics :
- 3-STATE
- Terminal Finish :
- TIN LEAD SILVER
- Address Bus Width :
- 14b
- RoHS Status :
- Non-RoHS Compliant
- Length :
- 16mm
- Supply Voltage-Max (Vsup) :
- 3.6V
- Additional Feature :
- AUTO/SELF REFRESH
- Published :
- 2007
- Sequential Burst Length :
- 1248FP
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 8
- ECCN Code :
- EAR99
- Base Part Number :
- MT48LC16M8A2
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Data Bus Width :
- 8B
- Write Cycle Time - Word, Page :
- 14ns
- Operating Supply Voltage :
- 3.3V
- Interleaved Burst Length :
- 1248
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Supply :
- 3V~3.6V
- Terminal Position :
- BOTTOM
- Datasheets
- MT48LC16M8A2FB-7E:G

Memory Micron Technology MT48LC16M8A2FB-7E:G Overview
Optimize your electronic designs with the high-performance Memory Micron Technology MT48LC16M8A2FB-7E:G, a dynamic random-access memory (DRAM) integrated circuit that offers exceptional speed and reliability. Manufactured by Micron Technology, a leader in memory innovation, this IC features a 128Mbit capacity structured in a parallel architecture, ensuring efficient handling of large volumes of data. Encased in a compact 60-ball fine-pitch BGA (FBGA) package, it provides a robust solution for advanced electronic applications requiring high memory density and swift data access. This product stands out in the marketplace for its combination of high capacity, compact form factor, and proven reliability, making it an ideal choice for manufacturers looking to enhance their high-performance computing systems.
MT48LC16M8A2FB-7E:G Features
The MT48LC16M8A2FB-7E:G IC DRAM from Micron Technology integrates several key features that make it a top selection for developers and OEMs. This includes its 128Mbit storage capacity, designed for efficient parallel processing capabilities. The small 60FBGA packaging not only saves space but also allows for more streamlined board layouts. High compatibility with a wide range of operating temperatures ensures reliability in diverse environmental conditions, making it a versatile choice for various high-demand applications.
MT48LC16M8A2FB-7E:G Applications
- Computing Systems: Utilized in desktops and servers for enhanced multitasking capabilities, improving system responsiveness and data processing speeds.
- Consumer Electronics: Integral in devices such as digital cameras and gaming consoles, where quick data retrieval is crucial for user experience.
- Telecommunications: Deployed in telecommunications infrastructure to manage data flow and buffering requirements efficiently, ensuring uninterrupted service.
- Automotive Systems: Supports advanced automotive electronics, including navigation and infotainment systems, by providing rapid access to high volumes of data.
- Industrial Automation: Used in industrial control systems where processing speed and memory capacity are critical for operational accuracy and reliability.
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