MT48H8M32LFB5-10
- Mfr.Part #
- MT48H8M32LFB5-10
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 90VFBGA
- Stock
- 25,576
- In Stock :
- 25,576
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Min (Vsup) :
- 1.7V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 90
- Organization :
- 8MX32
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Density :
- 256 Mb
- Qualification Status :
- Not Qualified
- Number of Functions :
- 1
- Operating Supply Voltage :
- 1.8V
- Write Cycle Time - Word, Page :
- 15ns
- Packaging :
- Box
- Package / Case :
- 90-VFBGA
- Terminal Pitch :
- 0.8mm
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 256Mb 8M x 32
- Number of Ports :
- 1
- Sequential Burst Length :
- 1248FP
- Memory Width :
- 32
- Additional Feature :
- AUTO/SELF REFRESH
- Mounting Type :
- Surface Mount
- Nominal Supply Current :
- 65mA
- Number of Terminations :
- 90
- Terminal Position :
- BOTTOM
- Memory Interface :
- Parallel
- HTS Code :
- 8542.32.00.24
- Supply Voltage :
- 1.8V
- Length :
- 13mm
- Terminal Finish :
- TIN SILVER COPPER
- Access Time :
- 7ns
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Base Part Number :
- MT48H8M32
- Refresh Cycles :
- 8192
- Memory Format :
- DRAM
- Height Seated (Max) :
- 1mm
- Operating Temperature :
- 0°C~70°C TA
- Clock Frequency :
- 100MHz
- Pin Count :
- 90
- I/O Type :
- COMMON
- Interleaved Burst Length :
- 1248
- Mount :
- Surface Mount
- Voltage - Supply :
- 1.7V~1.95V
- Output Characteristics :
- 3-STATE
- Standby Current-Max :
- 0.003A
- Published :
- 2004
- Memory Type :
- Volatile
- Address Bus Width :
- 14b
- Supply Voltage-Max (Vsup) :
- 1.9V
- Operating Mode :
- SYNCHRONOUS
- Datasheets
- MT48H8M32LFB5-10

Memory Micron Technology MT48H8M32LFB5-10 Overview
The Memory Micron Technology MT48H8M32LFB5-10 IC is a cutting-edge DRAM module designed for high-speed and high-density applications. Engineered by Micron Technology, this 256Mbit DRAM operates on a parallel interface, encapsulated in a compact 90VFBGA package. Its design is optimized for applications requiring quick data retrieval and substantial temporary data storage, making it an ideal choice for advanced computing and digital signal processing environments. The robust feature set combined with Micron's reliability makes this memory module a pivotal component for developers and manufacturers looking to enhance system performance and stability.
MT48H8M32LFB5-10 Features
This DRAM IC boasts several features that make it stand out in the semiconductor market. The parallel interface ensures compatibility with a wide range of existing technologies while facilitating easy integration. The 90VFBGA packaging not only reduces the physical footprint but also enhances thermal management and electrical connectivity. With a configuration of 8M x 32 bits, it provides ample capacity for demanding applications, all while operating under the standard power supply voltage for DRAMs, thus ensuring energy efficiency.
MT48H8M32LFB5-10 Applications
- Advanced Computing Systems: Utilizes its high-speed data access capabilities to manage intense processing tasks, supporting faster system performance.
- Consumer Electronics: Ideal for use in devices such as high-definition televisions and gaming consoles where quick data processing is crucial.
- Automotive Applications: Enhances the functionality of onboard systems that require robust memory solutions for real-time data processing.
- Telecommunication Infrastructure: Supports telecommunications equipment with its ability to handle large volumes of data efficiently, aiding in improved network services.
- Industrial Automation: In automation technologies, it plays a critical role in the seamless execution of control systems and complex operations.
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