MT48H8M16LFB4-75:K
- Mfr.Part #
- MT48H8M16LFB4-75:K
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 10,861
- In Stock :
- 10,861
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Number of Terminations :
- 54
- Length :
- 8mm
- Additional Feature :
- AUTO/SELF REFRESH
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Address Bus Width :
- 14b
- ECCN Code :
- EAR99
- Number of Pins :
- 54
- Memory Type :
- Volatile
- Supply Voltage-Min (Vsup) :
- 1.7V
- Terminal Pitch :
- 0.8mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MT48H8M16
- Voltage - Supply :
- 1.7V~1.95V
- Lead Free :
- Lead Free
- Write Cycle Time - Word, Page :
- 15ns
- Organization :
- 8MX16
- Nominal Supply Current :
- 70mA
- Clock Frequency :
- 133MHz
- Number of Functions :
- 1
- Pbfree Code :
- yes
- I/O Type :
- COMMON
- Pin Count :
- 54
- Interleaved Burst Length :
- 1248
- Refresh Cycles :
- 4096
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 1mm
- Data Bus Width :
- 16b
- Operating Temperature :
- 0°C~70°C TA
- Memory Size :
- 128Mb 8M x 16
- Density :
- 128 Mb
- Peak Reflow Temperature (Cel) :
- 260
- Access Time :
- 5.4ns
- Memory Interface :
- Parallel
- Package / Case :
- 54-VFBGA
- Sequential Burst Length :
- 1248FP
- Number of Ports :
- 1
- Radiation Hardening :
- No
- Memory Format :
- DRAM
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Operating Supply Voltage :
- 1.8V
- JESD-609 Code :
- e1
- Terminal Finish :
- TIN SILVER COPPER
- Memory Width :
- 16
- RoHS Status :
- ROHS3 Compliant
- Standby Current-Max :
- 0.0002A
- Supply Voltage :
- 1.8V
- Supply Voltage-Max (Vsup) :
- 1.95V
- Datasheets
- MT48H8M16LFB4-75:K

Memory Micron Technology MT48H8M16LFB4-75:K Overview
The Memory Micron Technology MT48H8M16LFB4-75:K is a high-performance 128Mbit DRAM integrated circuit, designed to meet the demanding specifications of advanced electronic systems. Packaged in a compact 54VFBGA, this product offers reliable parallel communication and robust data storage capabilities. Ideal for manufacturers looking to integrate scalable memory solutions, this DRAM chip is tailored for efficient performance and stability, making it an excellent choice for bulk purchases by B2B customers aiming to enhance their technological products.
MT48H8M16LFB4-75:K Features
This DRAM IC provides a large storage capacity of 128 Mbit, with high-speed parallel interface options ensuring fast data transfer rates. Its small footprint 54VFBGA package not only minimizes space on the PCB but also enhances thermal performance and reduces power consumption. The chip is designed to operate effectively under extended commercial temperature ranges, making it suitable for diverse industrial applications.
MT48H8M16LFB4-75:K Applications
- Consumer Electronics: Used in devices such as digital cameras and gaming consoles, where high-density and speedy memory are crucial for user experience and functionality.
- Mobile Devices: Serves as expandable memory in smartphones and tablets, facilitating enhanced multimedia storage and processing capabilities.
- Automotive Systems: Applied in advanced driver-assistance systems (ADAS) where reliable and quick memory is vital for real-time processing and decision-making.
- Industrial Automation: Integrated into control systems, offering robust data management and storage solutions to ensure seamless plant operations.
- Networking: Essential for routers and switches, improving buffer management and speed of data flow across networks.
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