MT48H8M16LFB4-75 IT:K
- Mfr.Part #
- MT48H8M16LFB4-75 IT:K
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 41,247
- In Stock :
- 41,247
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage :
- 1.8V
- I/O Type :
- COMMON
- Output Characteristics :
- 3-STATE
- Memory Width :
- 16
- Supply Voltage-Max (Vsup) :
- 1.95V
- Standby Current-Max :
- 0.0002A
- Number of Terminations :
- 54
- Supply Current-Max :
- 0.07mA
- Memory Format :
- DRAM
- Width :
- 8mm
- Terminal Position :
- BOTTOM
- Write Cycle Time - Word, Page :
- 15ns
- Published :
- 2007
- HTS Code :
- 8542.32.00.02
- Pin Count :
- 54
- Supply Voltage-Min (Vsup) :
- 1.7V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Ports :
- 1
- Interleaved Burst Length :
- 1248
- Refresh Cycles :
- 4096
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 1mm
- Operating Temperature :
- -40°C~85°C TA
- JESD-30 Code :
- S-PBGA-B54
- Base Part Number :
- MT48H8M16
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- SYNCHRONOUS
- Memory Size :
- 128Mb 8M x 16
- Number of Functions :
- 1
- Memory Density :
- 134217728 bit
- Terminal Pitch :
- 0.8mm
- Package / Case :
- 54-VFBGA
- Memory Interface :
- Parallel
- Additional Feature :
- AUTO/SELF REFRESH
- ECCN Code :
- EAR99
- Sequential Burst Length :
- 1248FP
- Packaging :
- Tray
- Length :
- 8mm
- Memory Type :
- Volatile
- Surface Mount :
- yes
- Access Time :
- 5.4ns
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Organization :
- 8MX16
- Voltage - Supply :
- 1.7V~1.95V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Clock Frequency :
- 133MHz
- Power Supplies :
- 1.8V
- Datasheets
- MT48H8M16LFB4-75 IT:K

Memory Micron Technology MT48H8M16LFB4-75 IT:K Overview
The Memory Micron Technology MT48H8M16LFB4-75 IT:K is an advanced DRAM (Dynamic Random Access Memory) component designed by Micron Technology, a leader in memory and storage solutions. This integrated circuit is engineered to deliver high-speed, large-capacity memory in a compact 54VFBGA (Very Fine Ball Grid Array) package. Ideal for applications requiring rapid access to large volumes of data, this 128Mbit DRAM facilitates enhanced system performance with its parallel interface, making it a perfect choice for sophisticated electronic systems in need of reliable and fast memory operations.
MT48H8M16LFB4-75 IT:K Features
This product boasts several features that make it stand out in the market. Key features include a high data capacity of 128Mbits, organized in a highly efficient parallel interface, which ensures fast data transfer speeds. The 54VFBGA package is not only space-efficient but also offers improved thermal characteristics, making it suitable for high-performance environments where durability and reliability are critical. The product operates at a temperature range of -40°C to 85°C, which ensures functionality under extreme conditions.
MT48H8M16LFB4-75 IT:K Applications
- Mobile Phones: Used in mobile phone technology to manage applications and multitasking efficiently by providing the necessary quick-access memory that enhances user experience.
- Gaming Consoles: Employs high-speed DRAM capabilities to handle complex graphics and gameplay smoothly, contributing to a richer gaming experience.
- Portable Computing Devices: Supports the demand for fast and reliable memory in laptops and tablets, ensuring quick data access and improved device responsiveness.
- Automotive Systems: Applied in advanced driver-assistance systems (ADAS) to process real-time data for features like object detection and navigation aids, enhancing both safety and performance.
- Industrial Automation: Utilized in machinery and robotics for real-time control and processing, enabling more efficient and accurate operations in industrial settings.
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