MT48H8M16LFB4-10
- Mfr.Part #
- MT48H8M16LFB4-10
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 1,865
- In Stock :
- 1,865
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Ports :
- 1
- Memory Type :
- Volatile
- Package / Case :
- 54-VFBGA
- Number of Pins :
- 54
- Access Time :
- 7ns
- Height Seated (Max) :
- 1mm
- Lead Free :
- Lead Free
- Sequential Burst Length :
- 1248FP
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 1.8V
- Pin Count :
- 54
- Terminal Pitch :
- 0.8mm
- Length :
- 8mm
- Address Bus Width :
- 14b
- Operating Temperature :
- 0°C~70°C TA
- Base Part Number :
- MT48H8M16
- Supply Voltage-Max (Vsup) :
- 1.9V
- Clock Frequency :
- 104MHz
- Refresh Cycles :
- 4096
- JESD-609 Code :
- e1
- Mounting Type :
- Surface Mount
- Memory Size :
- 128Mb 8M x 16
- Memory Width :
- 16
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AUTO/SELF REFRESH
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Published :
- 2005
- Packaging :
- Box
- Number of Terminations :
- 54
- Number of Functions :
- 1
- Radiation Hardening :
- No
- Terminal Finish :
- TIN SILVER COPPER
- Write Cycle Time - Word, Page :
- 15ns
- Data Bus Width :
- 16b
- Output Characteristics :
- 3-STATE
- Memory Interface :
- Parallel
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 1.7V~1.9V
- Organization :
- 8MX16
- Nominal Supply Current :
- 50mA
- I/O Type :
- COMMON
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Density :
- 128 Mb
- Pbfree Code :
- yes
- Standby Current-Max :
- 0.00001A
- Interleaved Burst Length :
- 1248
- Supply Voltage :
- 1.8V
- Datasheets
- MT48H8M16LFB4-10

Memory Micron Technology MT48H8M16LFB4-10 Overview
The Memory Micron Technology MT48H8M16LFB4-10 is a high-performance DRAM (Dynamic Random Access Memory) chip, crafted by the renowned Micron Technology. This IC features a 128Mbit capacity, tailored for applications requiring high-volume, high-speed data storage and retrieval. Engineered in a compact 54-VFBGA (Very Fine Ball Grid Array) package, it ensures reduced space requirement while providing robust performance and reliability. Ideal for B2B clients looking to integrate powerful memory solutions into their products, this DRAM chip enhances system efficiency with its parallel interface, facilitating faster operations and throughput.
MT48H8M16LFB4-10 Features
- 128Mbit data capacity for substantial storage.
- Parallel interface ensures high-speed data transfer and processing.
- 54-VFBGA package offers a compact footprint for space-sensitive applications.
- Operates at a power-saving 3.3V, making it suitable for energy-efficient designs.
MT48H8M16LFB4-10 Applications
- Consumer Electronics: Utilized in devices like digital cameras and gaming consoles where high-speed memory is crucial for user experience.
- Telecommunications: Helps in supporting high-speed data processing in telecommunications equipment.
- Automotive Systems: Integral for advanced driver-assistance systems (ADAS) that require rapid data access and processing.
- Industrial Automation: Employed in control systems that demand quick memory access to ensure smooth operations.
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