MT48H32M16LFB4-75 IT:C
- Mfr.Part #
- MT48H32M16LFB4-75 IT:C
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 54VFBGA
- Stock
- 2,076
- In Stock :
- 2,076
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Height Seated (Max) :
- 1mm
- Pbfree Code :
- yes
- Operating Temperature :
- -40°C~85°C TA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Surface Mount :
- yes
- Number of Functions :
- 1
- Memory Width :
- 16
- JESD-609 Code :
- e1
- Memory Density :
- 536870912 bit
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Max (Vsup) :
- 1.95V
- Access Time :
- 5.4ns
- Operating Mode :
- SYNCHRONOUS
- Memory Size :
- 512Mb 32M x 16
- Number of Ports :
- 1
- Output Characteristics :
- 3-STATE
- Memory Type :
- Volatile
- Package / Case :
- 54-VFBGA
- Base Part Number :
- MT48H32M16
- Refresh Cycles :
- 8192
- Length :
- 8mm
- Width :
- 8mm
- JESD-30 Code :
- S-PBGA-B54
- Interleaved Burst Length :
- 1248
- Clock Frequency :
- 133MHz
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Supplies :
- 1.8V
- Supply Voltage-Min (Vsup) :
- 1.7V
- ECCN Code :
- EAR99
- Voltage - Supply :
- 1.7V~1.95V
- Number of Terminations :
- 54
- Organization :
- 32MX16
- Packaging :
- Tray
- Mounting Type :
- Surface Mount
- Sequential Burst Length :
- 1248
- I/O Type :
- COMMON
- Memory Format :
- DRAM
- Standby Current-Max :
- 0.00001A
- Terminal Position :
- BOTTOM
- Supply Current-Max :
- 0.09mA
- Pin Count :
- 54
- Supply Voltage :
- 1.8V
- Qualification Status :
- Not Qualified
- HTS Code :
- 8542.32.00.28
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Write Cycle Time - Word, Page :
- 15ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Interface :
- Parallel
- Datasheets
- MT48H32M16LFB4-75 IT:C

Memory Micron Technology MT48H32M16LFB4-75 IT:C Overview
The MT48H32M16LFB4-75 IT:C, manufactured by Micron Technology, stands as a pivotal component in the realm of advanced digital memory solutions. This high-capacity DRAM (Dynamic Random-Access Memory) chip offers a substantial 512 Mbit of storage, making it an ideal candidate for applications demanding substantial data bandwidth and storage. Encased in a compact 54-pin VFBGA (Very Fine Ball Grid Array) package, this product is engineered for optimal thermal and electrical performance, ensuring reliability and durability in a range of operating environments. As businesses seek efficient and robust memory solutions, the Memory Micron Technology MT48H32M16LFB4-75 IT:C proves indispensable for enhancing the performance and scalability of sophisticated electronic systems.
MT48H32M16LFB4-75 IT:C Features
This integrated circuit excels in its delivery of high-speed data transmission and low power consumption, with the following standout features:
- High density: 512 Mbit capacity allows for extensive data storage and quick access.
- Parallel interface: Facilitates rapid data transfer rates, enhancing overall system speed and responsiveness.
- Compact footprint: 54-pin VFBGA package ensures a minimalistic design, perfect for space-constrained applications.
- Advanced technology: Utilizes Micron’s cutting-edge manufacturing processes for improved performance and reduced power consumption.
MT48H32M16LFB4-75 IT:C Applications
- Mobile devices: Utilized in smartphones and tablets to manage multiple applications and user data efficiently.
- Computing platforms: Provides the necessary bandwidth and storage for both personal and professional computing environments.
- Gaming consoles: Enhances gaming experiences by allowing faster loading times and more complex game mechanics.
- Embedded systems: Serves as a reliable memory solution in embedded applications like automotive systems and industrial automation.
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