MT46V64M8TG-75:D

Manufacturer :

Micron Technology

Product Category :

Memory

Additional Feature :

AUTO/SELF REFRESH

Number of Functions :

1

JESD-30 Code :

R-PDSO-G66

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Memory Width :

8

Number of Terminations :

66

Memory Format :

DRAM

Interleaved Burst Length :

248

JESD-609 Code :

e0

Operating Supply Voltage :

2.5V

Pin Count :

66

Access Time :

750ps

Peak Reflow Temperature (Cel) :

235

Voltage - Supply :

2.3V~2.7V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Memory Density :

536870912 bit

Supply Voltage :

2.5V

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Memory Size :

512Mb 64M x 8

Operating Mode :

SYNCHRONOUS

RoHS Status :

Non-RoHS Compliant

Length :

22.22mm

Refresh Cycles :

8192

HTS Code :

8542.32.00.28

Terminal Pitch :

0.65mm

Packaging :

Tray

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

15ns

Base Part Number :

MT46V64M8

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

2.7V

ECCN Code :

EAR99

Standby Current-Max :

0.005A

Supply Voltage-Min (Vsup) :

2.3V

Clock Frequency :

133MHz

Terminal Finish :

Tin/Lead (Sn/Pb)

Memory Type :

Volatile

Width :

10.16mm

Lead Free :

Contains Lead

Organization :

64MX8

Moisture Sensitivity Level (MSL) :

4 (72 Hours)

Mounting Type :

Surface Mount

Number of Ports :

1

Operating Temperature :

0°C~70°C TA

Sequential Burst Length :

248

I/O Type :

COMMON

Published :

2007