MT46V64M8P-6T:F TR
- Mfr.Part #
- MT46V64M8P-6T:F TR
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 66TSOP
- Stock
- 25,214
- In Stock :
- 25,214
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Interface :
- Parallel
- Memory Type :
- Volatile
- Clock Frequency :
- 167MHz
- Voltage - Supply :
- 2.3V~2.7V
- Width :
- 10.16mm
- Supply Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Published :
- 2009
- Operating Mode :
- SYNCHRONOUS
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Number of Ports :
- 1
- Terminal Pitch :
- 0.65mm
- Memory Width :
- 8
- ECCN Code :
- EAR99
- HTS Code :
- 8542.32.00.28
- Pin Count :
- 66
- Supply Voltage-Min (Vsup) :
- 2.3V
- Memory Density :
- 536870912 bit
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Surface Mount :
- yes
- Access Time :
- 700ps
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Functions :
- 1
- Base Part Number :
- MT46V64M8
- Number of Terminations :
- 66
- Organization :
- 64MX8
- Memory Size :
- 512Mb 64M x 8
- Terminal Position :
- Dual
- Write Cycle Time - Word, Page :
- 15ns
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage-Max (Vsup) :
- 2.7V
- Length :
- 22.22mm
- Memory Format :
- DRAM
- JESD-30 Code :
- R-PDSO-G66
- Height Seated (Max) :
- 1.2mm
- Operating Temperature :
- 0°C~70°C TA
- Datasheets
- MT46V64M8P-6T:F TR

Memory Micron Technology MT46V64M8P-6T:F TR Overview
Introducing the MT46V64M8P-6T:F TR from Micron Technology, a cutting-edge IC DRAM solution designed to meet the demanding requirements of modern electronic systems. This 512MBIT parallel 66TSOP memory device delivers unparalleled performance and reliability, making it the preferred choice for B2B clients seeking top-tier integrated circuits for their applications.
Featuring advanced parallel architecture and a compact 66TSOP form factor, this IC DRAM is optimized for high-speed data processing and efficient multitasking. Whether used in consumer electronics, industrial automation, or telecommunications infrastructure, the MT46V64M8P-6T:F TR ensures seamless operation and superior performance.
MT46V64M8P-6T:F TR Features
- High-density 512MBIT capacity
- Parallel interface for fast data transfer
- Compact 66TSOP package
- Low power consumption
- Wide operating temperature range
- Robust reliability and longevity
MT46V64M8P-6T:F TR Applications
- Embedded Systems: The MT46V64M8P-6T:F TR is ideal for use in embedded systems such as IoT devices, automotive electronics, and medical equipment, where reliable memory performance is critical for seamless operation and data integrity.
- Networking Equipment: In networking equipment such as routers, switches, and servers, the MT46V64M8P-6T:F TR provides the high-speed data processing capabilities required to handle heavy network traffic and ensure smooth communication between devices.
- Telecommunications Infrastructure: Deployed in telecommunications infrastructure including base stations, repeaters, and optical network equipment, this IC DRAM facilitates fast data processing and efficient signal transmission, enabling reliable communication services for end-users.
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