MT46V64M8P-5B:F

Manufacturer :

Micron Technology

Product Category :

Memory

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Sequential Burst Length :

248

Nominal Supply Current :

195mA

JESD-609 Code :

e3

Number of Terminations :

66

Address Bus Width :

15b

Memory Type :

Volatile

Packaging :

Tray

Supply Voltage-Max (Vsup) :

2.7V

Memory Width :

8

Lead Free :

Lead Free

Memory Size :

512Mb 64M x 8

Time@Peak Reflow Temperature-Max (s) :

30

Number of Functions :

1

Write Cycle Time - Word, Page :

15ns

Refresh Cycles :

8192

Memory Format :

DRAM

Number of Pins :

66

Voltage - Supply :

2.5V~2.7V

Output Characteristics :

3-STATE

RoHS Status :

ROHS3 Compliant

Organization :

64MX8

Interleaved Burst Length :

248

HTS Code :

8542.32.00.28

Base Part Number :

MT46V64M8

Operating Temperature :

0°C~70°C TA

Mount :

Surface Mount

Power Supplies :

2.6V

Terminal Position :

Dual

Data Bus Width :

8B

Clock Frequency :

200MHz

Pin Count :

66

Radiation Hardening :

No

Operating Supply Voltage :

2.5V

Access Time :

700ps

Published :

2009

Length :

22.22mm

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Terminal Pitch :

0.65mm

Terminal Finish :

Matte Tin (Sn)

Density :

512 Mb

I/O Type :

COMMON

Memory Interface :

Parallel

Additional Feature :

AUTO/SELF REFRESH

Height Seated (Max) :

1.2mm

Standby Current-Max :

0.005A

Supply Voltage :

2.6V

ECCN Code :

EAR99

Number of Ports :

1