MT46V64M8CY-5B:J

Manufacturer :

Micron Technology

Product Category :

Memory

Supply Voltage :

2.6V

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Write Cycle Time - Word, Page :

15ns

Length :

12.5mm

Interleaved Burst Length :

248

HTS Code :

8542.32.00.28

Number of Terminations :

60

Organization :

64MX8

Clock Frequency :

200MHz

Contact Plating :

Copper, Silver, Tin

Additional Feature :

AUTO/SELF REFRESH

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

Published :

2011

Operating Supply Voltage :

2.6V

Terminal Position :

BOTTOM

Height Seated (Max) :

1.2mm

Lead Free :

Lead Free

Number of Pins :

60

Number of Ports :

1

Sequential Burst Length :

248

Memory Size :

512Mb 64M x 8

Mounting Type :

Surface Mount

Address Bus Width :

15b

Access Time :

700ps

Packaging :

Bulk

Density :

512 Mb

Memory Interface :

Parallel

I/O Type :

COMMON

Operating Temperature :

0°C~70°C TA

Mount :

Surface Mount

Max Frequency :

400MHz

Refresh Cycles :

8192

Number of Functions :

1

ECCN Code :

EAR99

Supply Voltage-Max (Vsup) :

2.7V

Data Bus Width :

8B

Voltage - Supply :

2.5V~2.7V

Base Part Number :

MT46V64M8

Output Characteristics :

3-STATE

Package / Case :

60-TFBGA

Radiation Hardening :

No

Supply Voltage-Min (Vsup) :

2.5V

Memory Type :

Volatile

Terminal Pitch :

1mm

JESD-609 Code :

e1

Memory Width :

8

Standby Current-Max :

0.005A

Nominal Supply Current :

230mA

Pin Count :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

4 Weeks