MT46V64M4TG-75:G

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Interleaved Burst Length :

248

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Mount :

Surface Mount

Published :

2007

Number of Functions :

1

Address Bus Width :

15b

Memory Format :

DRAM

Nominal Supply Current :

150mA

Supply Voltage-Max (Vsup) :

2.7V

Operating Mode :

SYNCHRONOUS

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Supply Voltage-Min (Vsup) :

2.3V

Number of Terminations :

66

Terminal Pitch :

0.65mm

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Density :

256 Mb

Voltage - Supply :

2.3V~2.7V

Length :

22.22mm

Base Part Number :

MT46V64M4

Supply Voltage :

2.5V

Reach Compliance Code :

not_compliant

Memory Interface :

Parallel

Operating Supply Voltage :

2.5V

Number of Pins :

66

Sequential Burst Length :

248

Operating Temperature :

0°C~70°C TA

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

235

Terminal Finish :

Tin/Lead (Sn/Pb)

Access Time :

750ps

Write Cycle Time - Word, Page :

15ns

JESD-609 Code :

e0

Refresh Cycles :

8192

HTS Code :

8542.32.00.24

Standby Current-Max :

0.004A

Number of Ports :

1

I/O Type :

COMMON

Memory Size :

256Mb 64M x 4

Pin Count :

66

Memory Width :

4

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Clock Frequency :

133MHz

Organization :

64MX4

ECCN Code :

EAR99

Packaging :

Tray