MT46V64M4FG-75E:G

Manufacturer :

Micron Technology

Product Category :

Memory

Height Seated (Max) :

1.2mm

JESD-609 Code :

e0

Voltage - Supply :

2.3V~2.7V

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

2.7V

Standby Current-Max :

0.004A

Additional Feature :

AUTO/SELF REFRESH

Operating Temperature :

0°C~70°C TA

Memory Interface :

Parallel

Memory Format :

DRAM

Base Part Number :

MT46V64M4

Length :

14mm

Pbfree Code :

No

Output Characteristics :

3-STATE

Operating Mode :

SYNCHRONOUS

Interleaved Burst Length :

248

Memory Size :

256Mb 64M x 4

Number of Functions :

1

HTS Code :

8542.32.00.24

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Ports :

1

Memory Type :

Volatile

Supply Current-Max :

0.35mA

Supply Voltage-Min (Vsup) :

2.3V

Lead Free :

Contains Lead

JESD-30 Code :

R-PBGA-B60

Access Time :

750ps

Mounting Type :

Surface Mount

Pin Count :

60

Clock Frequency :

133MHz

Number of Terminations :

60

Memory Density :

268435456 bit

Refresh Cycles :

8192

Power Supplies :

2.5V

Organization :

64MX4

Width :

8mm

Reach Compliance Code :

not_compliant

Supply Voltage :

2.5V

Sequential Burst Length :

248

Terminal Finish :

Tin/Lead/Silver (Sn/Pb/Ag)

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Package / Case :

60-FBGA

Published :

2007

Terminal Position :

BOTTOM

Memory Width :

4

I/O Type :

COMMON

Terminal Pitch :

1mm

ECCN Code :

EAR99

Packaging :

Box

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

235