MT46V64M16P-6T:A
- Mfr.Part #
- MT46V64M16P-6T:A
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 66TSOP
- Stock
- 2,866
- In Stock :
- 2,866
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Number of Functions :
- 1
- Pbfree Code :
- yes
- Output Characteristics :
- 3-STATE
- Memory Width :
- 16
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Data Bus Width :
- 16b
- Terminal Pitch :
- 0.65mm
- Address Bus Width :
- 16b
- Nominal Supply Current :
- 275mA
- Terminal Position :
- Dual
- Number of Pins :
- 66
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 0°C~70°C TA
- Packaging :
- Tray
- Interleaved Burst Length :
- 248
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Access Time :
- 700ps
- Organization :
- 64MX16
- Pin Count :
- 66
- Base Part Number :
- MT46V64M16
- Supply Voltage-Min (Vsup) :
- 2.3V
- Operating Supply Voltage :
- 2.5V
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Ports :
- 1
- I/O Type :
- COMMON
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Standby Current-Max :
- 0.01A
- Write Cycle Time - Word, Page :
- 15ns
- Terminal Finish :
- MATTE TIN
- Published :
- 2007
- Length :
- 22.22mm
- Clock Frequency :
- 167MHz
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Sequential Burst Length :
- 248
- Memory Format :
- DRAM
- Mount :
- Surface Mount
- Number of Terminations :
- 66
- Refresh Cycles :
- 8192
- Voltage - Supply :
- 2.3V~2.7V
- Height Seated (Max) :
- 1.2mm
- HTS Code :
- 8542.32.00.32
- Supply Voltage-Max (Vsup) :
- 2.7V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Memory Type :
- Volatile
- Memory Size :
- 1Gb 64M x 16
- Supply Voltage :
- 2.5V
- Radiation Hardening :
- No
- Memory Interface :
- Parallel
- Density :
- 1 Gb
- Datasheets
- MT46V64M16P-6T:A

Memory Micron Technology MT46V64M16P-6T:A Overview
The Memory Micron Technology MT46V64M16P-6T:A is an integral component designed for high-performance computing applications requiring substantial data throughput and speed. This IC DRAM product offers a 1Gbit capacity structured in a parallel architecture, housed in a 66TSOP package for optimal durability and functionality. Its design caters specifically to advanced computing systems where speed and reliability are critical. The integration of high-grade materials and Micron's cutting-edge fabrication technology ensures that this memory module not only meets but exceeds the rigorous demands of modern technology infrastructures.
MT46V64M16P-6T:A Features
This DRAM IC from Micron Technology features a compact 66TSOP package that provides robust protection and reliable connectivity in a dense circuit environment. With a storage capacity of 1Gbit and parallel data processing capabilities, it supports extensive data management tasks while maintaining high-speed data access. The device's low latency and power efficiency make it an ideal choice for systems requiring fast memory with a conservative power footprint.
MT46V64M16P-6T:A Applications
- Advanced Computing Systems: Used in servers and high-performance computers to manage large datasets and complex processing tasks efficiently.
- Consumer Electronics: Integrates into devices such as high-end gaming consoles and smart TVs, providing the speed necessary for enhanced user experiences and real-time performance.
- Telecommunications: Essential for telecommunications equipment where large volumes of data are processed and need to be buffered swiftly to ensure seamless service delivery.
- Automotive Systems: Employs in advanced driver-assistance systems (ADAS) where quick data processing is crucial for real-time decision-making and vehicle safety.
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