MT46V32M4TG-5B:D
- Mfr.Part #
- MT46V32M4TG-5B:D
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 66TSOP
- Stock
- 32,473
- In Stock :
- 32,473
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- JESD-609 Code :
- e0
- Length :
- 22.22mm
- Terminal Pitch :
- 0.65mm
- Refresh Cycles :
- 4096
- Surface Mount :
- yes
- Packaging :
- Tray
- Memory Size :
- 128Mb 32M x 4
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Functions :
- 1
- Memory Width :
- 4
- Interleaved Burst Length :
- 248
- Output Characteristics :
- 3-STATE
- Width :
- 10.16mm
- Organization :
- 32MX4
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Terminal Finish :
- TIN LEAD
- Write Cycle Time - Word, Page :
- 15ns
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Ports :
- 1
- Published :
- 2007
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- JESD-30 Code :
- R-PDSO-G66
- Memory Density :
- 134217728 bit
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- SYNCHRONOUS
- Base Part Number :
- MT46V32M4
- Supply Voltage-Min (Vsup) :
- 2.5V
- Sequential Burst Length :
- 248
- Clock Frequency :
- 200MHz
- Memory Interface :
- Parallel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 0°C~70°C TA
- Standby Current-Max :
- 0.003A
- Number of Terminations :
- 66
- Power Supplies :
- 2.6V
- Voltage - Supply :
- 2.5V~2.7V
- ECCN Code :
- EAR99
- Pin Count :
- 66
- Supply Current-Max :
- 0.355mA
- Qualification Status :
- Not Qualified
- Memory Type :
- Volatile
- Supply Voltage :
- 2.6V
- I/O Type :
- COMMON
- Access Time :
- 700ps
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8542.32.00.02
- Supply Voltage-Max (Vsup) :
- 2.7V
- Datasheets
- MT46V32M4TG-5B:D

Memory Micron Technology MT46V32M4TG-5B:D Overview
This Micron Technology MT46V32M4TG-5B:D is a high-performance integrated circuit (IC) Dynamic Random Access Memory (DRAM) designed for parallel processing applications. With a capacity of 128MBIT and a 66TSOP package, it offers efficient data storage and retrieval capabilities for a wide range of electronic devices.
Featuring advanced parallel architecture, this DRAM module ensures rapid access times and seamless integration with various system configurations. Its reliable performance and robust construction make it an ideal choice for demanding industrial and commercial environments.
MT46V32M4TG-5B:D Features
- 128MBIT DRAM
- Parallel processing
- 66TSOP package
- Efficient data storage
- Rapid access times
- Reliable performance
- Robust construction
MT46V32M4TG-5B:D Applications
- Industrial Automation: This DRAM module is commonly used in industrial automation systems for storing and processing data from sensors, actuators, and control devices. Its high-speed parallel architecture ensures real-time responsiveness and seamless operation in demanding manufacturing environments.
- Telecommunications: In telecommunications equipment such as routers, switches, and base stations, this DRAM facilitates high-speed data processing and packet switching. Its large capacity and efficient data retrieval capabilities contribute to the smooth operation of communication networks.
- Medical Devices: Medical imaging devices, patient monitoring systems, and diagnostic equipment utilize this DRAM for storing and processing large volumes of medical data. Its reliable performance and high data transfer rates enable accurate diagnosis and efficient patient care.
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