MT46V32M4P-5B:D

Manufacturer :

Micron Technology

Product Category :

Memory

Published :

2007

Memory Format :

DRAM

Output Characteristics :

3-STATE

Operating Temperature :

0°C~70°C TA

Supply Voltage-Max (Vsup) :

2.7V

Number of Terminations :

66

Length :

22.22mm

Supply Voltage-Min (Vsup) :

2.5V

Memory Interface :

Parallel

I/O Type :

COMMON

JESD-30 Code :

R-PDSO-G66

Memory Density :

134217728 bit

Terminal Position :

Dual

Supply Current-Max :

0.355mA

Reach Compliance Code :

Unknown

Memory Type :

Volatile

Memory Size :

128Mb 32M x 4

Sequential Burst Length :

248

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Terminal Pitch :

0.65mm

ECCN Code :

EAR99

Number of Functions :

1

Additional Feature :

AUTO/SELF REFRESH

Base Part Number :

MT46V32M4

RoHS Status :

ROHS3 Compliant

Access Time :

700ps

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

JESD-609 Code :

e3

Memory Width :

4

Mounting Type :

Surface Mount

Refresh Cycles :

4096

Width :

10.16mm

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Supply :

2.5V~2.7V

Height Seated (Max) :

1.2mm

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Organization :

32MX4

Packaging :

Tray

Clock Frequency :

200MHz

HTS Code :

8542.32.00.02

Number of Ports :

1

Power Supplies :

2.6V

Standby Current-Max :

0.003A

Interleaved Burst Length :

248

Pin Count :

66

Operating Mode :

SYNCHRONOUS

Supply Voltage :

2.6V

Write Cycle Time - Word, Page :

15ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)