MT46V32M16TG-75E:C

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Mfr.Part #
MT46V32M16TG-75E:C
Manufacturer
Micron Technology
Package / Case
66-TSSOP (0.400, 10.16mm Width)
Datasheet
Download
Description
IC DRAM 512MBIT PARALLEL 66TSOP
Stock
20,495
In Stock :
20,495

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Manufacturer :
Micron Technology
Product Category :
Memory
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Qualification Status :
Not Qualified
Lead Free :
Contains Lead
Additional Feature :
AUTO/SELF REFRESH
Memory Type :
Volatile
Memory Format :
DRAM
Time@Peak Reflow Temperature-Max (s) :
30
Memory Width :
16
Number of Terminations :
66
Supply Voltage-Min (Vsup) :
2.3V
Interleaved Burst Length :
248
HTS Code :
8542.32.00.28
Terminal Position :
Dual
Memory Interface :
Parallel
Voltage - Supply :
2.3V~2.7V
Peak Reflow Temperature (Cel) :
235
Pin Count :
66
Sequential Burst Length :
248
Supply Voltage-Max (Vsup) :
2.7V
Operating Mode :
SYNCHRONOUS
Length :
22.22mm
I/O Type :
COMMON
Organization :
32MX16
Terminal Pitch :
0.65mm
Output Characteristics :
3-STATE
Number of Ports :
1
RoHS Status :
Non-RoHS Compliant
Reach Compliance Code :
not_compliant
Refresh Cycles :
8192
Power Supplies :
2.5V
Access Time :
750ps
Height Seated (Max) :
1.2mm
Clock Frequency :
133MHz
Memory Size :
512Mb 32M x 16
Memory Density :
536870912 bit
Supply Voltage :
2.5V
Surface Mount :
yes
Number of Functions :
1
Width :
10.16mm
JESD-30 Code :
R-PDSO-G66
Operating Temperature :
0°C~70°C TA
Published :
2007
Package / Case :
66-TSSOP (0.400, 10.16mm Width)
Write Cycle Time - Word, Page :
15ns
Standby Current-Max :
0.005A
JESD-609 Code :
e0
Packaging :
Tray
Terminal Finish :
TIN LEAD
Base Part Number :
MT46V32M16
Moisture Sensitivity Level (MSL) :
4 (72 Hours)
Datasheets
MT46V32M16TG-75E:C
Introducing Memory Micron Technology MT46V32M16TG-75E:C from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:66, Operating Temperature:0°C~70°C TA, Package / Case:66-TSSOP (0.400, 10.16mm Width), Base Part Number:MT46V32M16, MT46V32M16TG-75E:C pinout, MT46V32M16TG-75E:C datasheet PDF, MT46V32M16TG-75E:C amp .Beyond Memory Micron Technology MT46V32M16TG-75E:C ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT46V32M16TG-75E:C


Memory Micron Technology MT46V32M16TG-75E:C Overview

Introducing the cutting-edge MT46V32M16TG-75E:C Integrated Circuit from Micron Technology, a leading innovator in memory solutions. This IC DRAM boasts a capacity of 512MBIT, offering robust performance and reliability for a wide range of applications. Designed with precision and expertise, it features a parallel interface and comes in a compact 66TSOP package, ensuring seamless integration into various systems.

Engineered to meet the demands of modern computing, the MT46V32M16TG-75E:C excels in delivering high-speed data access and efficient operation. Its versatility and efficiency make it the ideal choice for B2B customers seeking reliable memory solutions for their projects.

MT46V32M16TG-75E:C Features

  • 512MBIT capacity
  • IC DRAM technology
  • Parallel interface
  • 66TSOP package
  • High-speed data access
  • Reliable performance
  • Compact and versatile design

MT46V32M16TG-75E:C Applications

  • Embedded Systems: The MT46V32M16TG-75E:C is ideal for embedded systems requiring efficient memory management and high-speed data processing. It enhances the performance of devices such as industrial control systems, medical equipment, and automotive electronics.
  • Networking Devices: In networking devices like routers, switches, and network storage systems, this IC DRAM ensures seamless data transmission and efficient operation. Its robust design and reliable performance make it a preferred choice for networking professionals.
  • Consumer Electronics: From smart TVs and gaming consoles to smartphones and tablets, the MT46V32M16TG-75E:C powers a wide range of consumer electronics. Its compact form factor and high-speed capabilities contribute to the smooth functioning of these devices, enhancing user experience.
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