MT46V32M16TG-75E:C
- Mfr.Part #
- MT46V32M16TG-75E:C
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 66TSOP
- Stock
- 20,495
- In Stock :
- 20,495
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Type :
- Volatile
- Memory Format :
- DRAM
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Width :
- 16
- Number of Terminations :
- 66
- Supply Voltage-Min (Vsup) :
- 2.3V
- Interleaved Burst Length :
- 248
- HTS Code :
- 8542.32.00.28
- Terminal Position :
- Dual
- Memory Interface :
- Parallel
- Voltage - Supply :
- 2.3V~2.7V
- Peak Reflow Temperature (Cel) :
- 235
- Pin Count :
- 66
- Sequential Burst Length :
- 248
- Supply Voltage-Max (Vsup) :
- 2.7V
- Operating Mode :
- SYNCHRONOUS
- Length :
- 22.22mm
- I/O Type :
- COMMON
- Organization :
- 32MX16
- Terminal Pitch :
- 0.65mm
- Output Characteristics :
- 3-STATE
- Number of Ports :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- not_compliant
- Refresh Cycles :
- 8192
- Power Supplies :
- 2.5V
- Access Time :
- 750ps
- Height Seated (Max) :
- 1.2mm
- Clock Frequency :
- 133MHz
- Memory Size :
- 512Mb 32M x 16
- Memory Density :
- 536870912 bit
- Supply Voltage :
- 2.5V
- Surface Mount :
- yes
- Number of Functions :
- 1
- Width :
- 10.16mm
- JESD-30 Code :
- R-PDSO-G66
- Operating Temperature :
- 0°C~70°C TA
- Published :
- 2007
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Write Cycle Time - Word, Page :
- 15ns
- Standby Current-Max :
- 0.005A
- JESD-609 Code :
- e0
- Packaging :
- Tray
- Terminal Finish :
- TIN LEAD
- Base Part Number :
- MT46V32M16
- Moisture Sensitivity Level (MSL) :
- 4 (72 Hours)
- Datasheets
- MT46V32M16TG-75E:C

Memory Micron Technology MT46V32M16TG-75E:C Overview
Introducing the cutting-edge MT46V32M16TG-75E:C Integrated Circuit from Micron Technology, a leading innovator in memory solutions. This IC DRAM boasts a capacity of 512MBIT, offering robust performance and reliability for a wide range of applications. Designed with precision and expertise, it features a parallel interface and comes in a compact 66TSOP package, ensuring seamless integration into various systems.
Engineered to meet the demands of modern computing, the MT46V32M16TG-75E:C excels in delivering high-speed data access and efficient operation. Its versatility and efficiency make it the ideal choice for B2B customers seeking reliable memory solutions for their projects.
MT46V32M16TG-75E:C Features
- 512MBIT capacity
- IC DRAM technology
- Parallel interface
- 66TSOP package
- High-speed data access
- Reliable performance
- Compact and versatile design
MT46V32M16TG-75E:C Applications
- Embedded Systems: The MT46V32M16TG-75E:C is ideal for embedded systems requiring efficient memory management and high-speed data processing. It enhances the performance of devices such as industrial control systems, medical equipment, and automotive electronics.
- Networking Devices: In networking devices like routers, switches, and network storage systems, this IC DRAM ensures seamless data transmission and efficient operation. Its robust design and reliable performance make it a preferred choice for networking professionals.
- Consumer Electronics: From smart TVs and gaming consoles to smartphones and tablets, the MT46V32M16TG-75E:C powers a wide range of consumer electronics. Its compact form factor and high-speed capabilities contribute to the smooth functioning of these devices, enhancing user experience.
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