MT46V32M16P-5B:F
- Mfr.Part #
- MT46V32M16P-5B:F
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 66TSOP
- Stock
- 7,581
- In Stock :
- 7,581
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Address Bus Width :
- 15b
- Lead Free :
- Lead Free
- Memory Format :
- DRAM
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Base Part Number :
- MT46V32M16
- ECCN Code :
- EAR99
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Supply Voltage :
- 2.6V
- HTS Code :
- 8542.32.00.28
- Terminal Finish :
- Matte Tin (Sn)
- Interleaved Burst Length :
- 248
- Operating Temperature :
- 0°C~70°C TA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 66
- Pin Count :
- 66
- Voltage - Supply :
- 2.5V~2.7V
- Supply Voltage-Min (Vsup) :
- 2.5V
- Organization :
- 32MX16
- Published :
- 2009
- Density :
- 512 Mb
- Access Time :
- 700ps
- Number of Pins :
- 66
- Packaging :
- Tray
- Additional Feature :
- AUTO/SELF REFRESH
- Data Bus Width :
- 16b
- Refresh Cycles :
- 8192
- Supply Voltage-Max (Vsup) :
- 2.7V
- Number of Ports :
- 1
- Nominal Supply Current :
- 215mA
- Standby Current-Max :
- 0.005A
- Output Characteristics :
- 3-STATE
- Operating Supply Voltage :
- 2.6V
- Mounting Type :
- Surface Mount
- Sequential Burst Length :
- 248
- Memory Type :
- Volatile
- Memory Size :
- 512Mb 32M x 16
- I/O Type :
- COMMON
- Clock Frequency :
- 200MHz
- Height Seated (Max) :
- 1.2mm
- Terminal Pitch :
- 0.65mm
- Number of Functions :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Write Cycle Time - Word, Page :
- 15ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-609 Code :
- e3
- Length :
- 22.22mm
- Memory Interface :
- Parallel
- Memory Width :
- 16
- Datasheets
- MT46V32M16P-5B:F

Memory Micron Technology MT46V32M16P-5B:F Overview
The Memory Micron Technology MT46V32M16P-5B:F is a high-performance 512Mbit DRAM integrated circuit, engineered by Micron Technology, a leader in memory and storage solutions. This product is crafted to deliver robust parallel processing capabilities and is housed in a compact 66TSOP package, making it highly suitable for applications requiring dense memory in a small footprint. Its design is optimized for high-speed operation and reliability, offering an exceptional solution for businesses looking to enhance their technology infrastructure.
MT46V32M16P-5B:F Features
This IC DRAM product features a large storage capacity of 512Mbit, enabling efficient handling of large datasets and complex applications. The parallel interface ensures high-speed data transfer rates, which is crucial for high-performance computing systems. Additionally, its 66TSOP package is designed for streamlined integration into various electronic assemblies, providing both functional versatility and practicality in design.
MT46V32M16P-5B:F Applications
- Computing Systems: Utilized in servers and workstations to enhance memory bandwidth and performance, accommodating rigorous processing demands.
- Consumer Electronics: Ideal for use in high-end gaming consoles and home entertainment systems, where large memory capacity and speed are necessary for optimal performance.
- Telecommunications: Employed in telecommunications equipment, supporting complex algorithms and large-scale data processing required for network management and signal processing.
- Automotive Systems: Integrates into automotive infotainment and advanced driver-assistance systems (ADAS), providing the necessary memory resources for multimedia content and real-time processing.
- Industrial Applications: Used in industrial control systems, ensuring robust operation in environments requiring high reliability and extended operational stability.
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