MT46V32M16BN-75:C
- Mfr.Part #
- MT46V32M16BN-75:C
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 28,779
- In Stock :
- 28,779
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Nominal Supply Current :
- 145mA
- Access Time :
- 750ps
- Address Bus Width :
- 15b
- Pin Count :
- 60
- Write Cycle Time - Word, Page :
- 15ns
- ECCN Code :
- EAR99
- Memory Interface :
- Parallel
- Packaging :
- Tray
- Number of Pins :
- 60
- Operating Mode :
- SYNCHRONOUS
- Memory Width :
- 16
- Terminal Position :
- BOTTOM
- Height Seated (Max) :
- 1.2mm
- Density :
- 512 Mb
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Memory Size :
- 512Mb 32M x 16
- Interleaved Burst Length :
- 248
- Peak Reflow Temperature (Cel) :
- 260
- Output Characteristics :
- 3-STATE
- Additional Feature :
- AUTO/SELF REFRESH
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Operating Supply Voltage :
- 2.5V
- Memory Type :
- Volatile
- Package / Case :
- 60-TFBGA
- Supply Voltage :
- 2.5V
- Terminal Pitch :
- 1mm
- Clock Frequency :
- 133MHz
- Operating Temperature :
- 0°C~70°C TA
- I/O Type :
- COMMON
- Memory Format :
- DRAM
- Refresh Cycles :
- 8192
- Terminal Finish :
- TIN SILVER COPPER
- Supply Voltage-Max (Vsup) :
- 2.7V
- Qualification Status :
- Not Qualified
- Base Part Number :
- MT46V32M16
- Voltage - Supply :
- 2.3V~2.7V
- JESD-609 Code :
- e1
- Length :
- 12.5mm
- Number of Terminations :
- 60
- Pbfree Code :
- yes
- Published :
- 2007
- Organization :
- 32MX16
- Standby Current-Max :
- 0.005A
- HTS Code :
- 8542.32.00.28
- Sequential Burst Length :
- 248
- Number of Ports :
- 1
- Number of Functions :
- 1
- Supply Voltage-Min (Vsup) :
- 2.3V
- Datasheets
- MT46V32M16BN-75:C

Memory Micron Technology MT46V32M16BN-75:C Overview
Introducing the Memory Micron Technology MT46V32M16BN-75:C, a high-performance IC DRAM that delivers a robust 512Mbit data capacity in a compact 60FBGA package. This memory module is engineered by Micron Technology, a leader in advanced memory solutions, ensuring top-tier reliability and performance. Ideal for applications requiring high-speed data processing and substantial storage, this product offers exceptional durability and efficiency in handling intensive memory tasks. Its design is optimized for streamlined integration into various digital platforms, supporting a broad range of industrial applications.
MT46V32M16BN-75:C Features
The MT46V32M16BN-75:C is equipped with numerous features that enhance its functionality and reliability in complex electronic environments. It operates in a parallel interface configuration, which enables fast data transfer rates, making it suitable for performance-critical applications. Its compact 60FBGA packaging not only minimizes space on the hardware layout but also enhances thermal management, thereby improving the overall device reliability and lifespan.
MT46V32M16BN-75:C Applications
- Consumer Electronics: Utilized in devices like digital cameras and gaming consoles where high-speed data processing is crucial for user experience.
- Mobile Devices: Employs memory in smartphones and tablets to manage multiple applications simultaneously without compromising performance.
- Automotive Systems: Critical for use in automotive infotainment systems, where durable and dependable memory storage is necessary for system functionality and safety.
- Networking Equipment: Supports the backbone of network routers and switches, ensuring efficient data flow and system stability in communications infrastructure.
- Industrial Applications: Integrated into industrial automation systems, which require robust memory solutions that can withstand harsh environments and continuous operation.
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