MT46V32M16BN-5B:F
- Mfr.Part #
- MT46V32M16BN-5B:F
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 166
- In Stock :
- 166
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Organization :
- 32MX16
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Output Characteristics :
- 3-STATE
- Mount :
- Surface Mount
- Supply Voltage-Max (Vsup) :
- 2.7V
- I/O Type :
- COMMON
- Number of Ports :
- 1
- Memory Width :
- 16
- Operating Temperature :
- 0°C~70°C TA
- Terminal Finish :
- TIN SILVER COPPER
- Clock Frequency :
- 200MHz
- Voltage - Supply :
- 2.5V~2.7V
- Access Time :
- 700ps
- Memory Size :
- 512Mb 32M x 16
- HTS Code :
- 8542.32.00.28
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Address Bus Width :
- 15b
- Pin Count :
- 60
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Write Cycle Time - Word, Page :
- 15ns
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Length :
- 12.5mm
- Density :
- 512 Mb
- Sequential Burst Length :
- 248
- Power Supplies :
- 2.6V
- Supply Voltage :
- 2.6V
- Number of Pins :
- 60
- Number of Terminations :
- 60
- Standby Current-Max :
- 0.005A
- Data Bus Width :
- 16b
- Packaging :
- Tray
- ECCN Code :
- EAR99
- Memory Format :
- DRAM
- Additional Feature :
- AUTO/SELF REFRESH
- RoHS Status :
- ROHS3 Compliant
- Interleaved Burst Length :
- 248
- Operating Supply Voltage :
- 2.5V
- Published :
- 2009
- Terminal Pitch :
- 1mm
- Lead Free :
- Lead Free
- Base Part Number :
- MT46V32M16
- JESD-609 Code :
- e1
- Number of Functions :
- 1
- Height Seated (Max) :
- 1.2mm
- Package / Case :
- 60-TFBGA
- Terminal Position :
- BOTTOM
- Nominal Supply Current :
- 215mA
- Refresh Cycles :
- 8192
- Datasheets
- MT46V32M16BN-5B:F

Memory Micron Technology MT46V32M16BN-5B:F Overview
The Memory Micron Technology MT46V32M16BN-5B:F DRAM is a high-capacity, parallel interface memory module that provides robust data storage capabilities. This 512Mbit DRAM module is encapsulated in a compact 60-ball fine-pitch BGA (FBGA) package, which ensures efficient thermal management and space-saving on the PCB. Designed for high-speed operation at a clock rate of 200 MHz, it offers exceptional throughput and reliability for advanced computing solutions. Its low-latency and high-bandwidth attributes make it an ideal choice for sophisticated electronics that demand substantial memory in a constrained footprint.
MT46V32M16BN-5B:F Features
This integrated circuit features a 512Mbit density, enabling substantial data management and storage for complex applications. The parallel interface of the MT46V32M16BN-5B:F ensures compatibility with a wide range of hardware and systems, while its standard 60FBGA packaging makes it versatile for various mounting requirements. Additional features include a power-saving low-voltage operation mode and programmable burst lengths, which contribute to its high efficiency and adaptability in diverse operational environments.
MT46V32M16BN-5B:F Applications
- Computing Systems: Utilized in desktops, laptops, and servers for enhancing system responsiveness and multitasking capabilities by expanding memory reserves.
- Telecommunications: Plays a crucial role in telecom hardware where large memory buffers are needed to manage high-speed data transmission and signal processing.
- Consumer Electronics: Integrated into devices such as smart TVs and gaming consoles to improve user experience through faster loading times and smoother operation.
- Industrial Applications: Essential in complex industrial machinery and automation systems requiring robust memory solutions to handle extensive data logging and real-time processing tasks.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) and infotainment systems to support the high data throughput and real-time processing demands of modern vehicles.
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