MT46V256M4P-6T:A
- Mfr.Part #
- MT46V256M4P-6T:A
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 66TSOP
- Stock
- 33,429
- In Stock :
- 33,429
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Data Bus Width :
- 4B
- Voltage - Supply :
- 2.3V~2.7V
- Packaging :
- Tray
- Terminal Finish :
- MATTE TIN
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Standby Current-Max :
- 0.01A
- Density :
- 1 Gb
- Base Part Number :
- MT46V256M4
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- Operating Supply Voltage :
- 2.5V
- Radiation Hardening :
- No
- Address Bus Width :
- 16b
- Published :
- 2007
- Clock Frequency :
- 167MHz
- I/O Type :
- COMMON
- Memory Width :
- 4
- Supply Voltage :
- 2.5V
- ECCN Code :
- EAR99
- Height Seated (Max) :
- 1.2mm
- Pin Count :
- 66
- Refresh Cycles :
- 8192
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Terminal Pitch :
- 0.65mm
- Output Characteristics :
- 3-STATE
- Number of Terminations :
- 66
- Number of Ports :
- 1
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Interleaved Burst Length :
- 248
- Length :
- 22.22mm
- Memory Type :
- Volatile
- HTS Code :
- 8542.32.00.32
- Supply Voltage-Min (Vsup) :
- 2.3V
- Nominal Supply Current :
- 230mA
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Supply Voltage-Max (Vsup) :
- 2.7V
- Additional Feature :
- AUTO/SELF REFRESH
- Sequential Burst Length :
- 248
- Memory Format :
- DRAM
- Number of Pins :
- 66
- Operating Temperature :
- 0°C~70°C TA
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Write Cycle Time - Word, Page :
- 15ns
- Memory Size :
- 1Gb 256M x 4
- Organization :
- 256MX4
- Access Time :
- 700ps
- Datasheets
- MT46V256M4P-6T:A

Memory Micron Technology MT46V256M4P-6T:A Overview
The Memory Micron Technology MT46V256M4P-6T:A is an advanced integrated circuit that stands out in the high-demand field of digital storage solutions. This 1Gbit DRAM offers high-speed, reliable parallel communication in a compact 66TSOP package, making it an ideal choice for manufacturers seeking robust performance in data-intensive applications. Its high density and easy integration cater to a wide range of industrial requirements, ensuring both scalability and efficiency. Designed by Micron Technology, a leader in memory innovation, this product promises superior quality and enduring reliability, making it a prime selection for B2B customers looking to purchase in bulk.
MT46V256M4P-6T:A Features
The MT46V256M4P-6T:A DRAM chip features include 1Gbit storage capacity, a parallel interface, and a thin small-outline package (TSOP) that facilitates dense board placement. This memory module is designed for high-speed operation, supporting a wide range of industrial and computing applications. It combines low power consumption with high data integrity, offering a robust solution for sophisticated electronic assemblies.
MT46V256M4P-6T:A Applications
- Computing Systems: Utilized in desktops, laptops, and servers for enhanced memory capacity and speed, ensuring efficient processing and multitasking capabilities.
- Networking Hardware: Embedded in routers and switches to manage data flow and buffer operations, improving device throughput and reliability in communication networks.
- Consumer Electronics: Integrated into devices such as digital cameras and smart TVs, providing the necessary memory resources for high-performance multimedia processing and storage.
- Industrial Automation: Applied in control systems for real-time data processing, aiding in the automation and monitoring of industrial processes.
- Automotive Technology: Used in advanced driver-assistance systems (ADAS) to support the processing and storage of real-time sensory and navigational data, enhancing vehicle safety and performance.
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