MT46V16M16P-5B IT:M

Manufacturer :

Micron Technology

Product Category :

Memory

JESD-30 Code :

R-PDSO-G66

Interleaved Burst Length :

248

RoHS Status :

ROHS3 Compliant

Memory Size :

256Mb 16M x 16

Base Part Number :

MT46V16M16

Refresh Cycles :

8192

Supply Voltage :

2.6V

Operating Mode :

SYNCHRONOUS

JESD-609 Code :

e3

Number of Functions :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Organization :

16MX16

Memory Format :

DRAM

Additional Feature :

AUTO/SELF REFRESH

Clock Frequency :

200MHz

Published :

2014

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.65mm

Standby Current-Max :

0.004A

Operating Temperature :

-40°C~85°C TA

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Bulk

Factory Lead Time :

4 Weeks

Width :

10.16mm

Terminal Position :

Dual

HTS Code :

8542.32.00.28

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

2.5V

Access Time :

700ps

Terminal Finish :

Matte Tin (Sn)

Supply Voltage-Max (Vsup) :

2.7V

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Power Supplies :

2.6V

Memory Interface :

Parallel

Supply Current-Max :

0.175mA

Qualification Status :

Not Qualified

Height Seated (Max) :

1.2mm

Memory Width :

16

Peak Reflow Temperature (Cel) :

260

Length :

22.22mm

Memory Type :

Volatile

Memory Density :

268435456 bit

I/O Type :

COMMON

Number of Ports :

1

Voltage - Supply :

2.5V~2.7V

Number of Terminations :

66

Sequential Burst Length :

248