MT46V16M16CY-5B:M
- Mfr.Part #
- MT46V16M16CY-5B:M
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60FBGA
- Stock
- 2,132
- In Stock :
- 2,132
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Density :
- 256 Mb
- Mounting Type :
- Surface Mount
- Access Time :
- 700ps
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 0°C~70°C TA
- Refresh Cycles :
- 8192
- Additional Feature :
- AUTO/SELF REFRESH
- Data Bus Width :
- 16b
- Number of Pins :
- 60
- Interleaved Burst Length :
- 248
- Published :
- 2012
- Factory Lead Time :
- 4 Weeks
- Output Characteristics :
- 3-STATE
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Voltage - Supply :
- 2.5V~2.7V
- Max Frequency :
- 400MHz
- Write Cycle Time - Word, Page :
- 15ns
- Sequential Burst Length :
- 248
- Terminal Pitch :
- 1mm
- Package / Case :
- 60-TFBGA
- Peak Reflow Temperature (Cel) :
- 260
- Memory Size :
- 256Mb 16M x 16
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Packaging :
- Bulk
- Terminal Finish :
- TIN SILVER COPPER
- Length :
- 12.5mm
- Number of Functions :
- 1
- Clock Frequency :
- 200MHz
- Memory Interface :
- Parallel
- Terminal Position :
- BOTTOM
- Memory Type :
- Volatile
- Number of Ports :
- 1
- Contact Plating :
- Copper, Silver, Tin
- Supply Voltage :
- 2.6V
- Mount :
- Surface Mount
- Memory Width :
- 16
- JESD-609 Code :
- e1
- I/O Type :
- COMMON
- Number of Terminations :
- 60
- Nominal Supply Current :
- 175mA
- Height Seated (Max) :
- 1.2mm
- Radiation Hardening :
- No
- Operating Supply Voltage :
- 2.6V
- Memory Format :
- DRAM
- Organization :
- 16MX16
- Supply Voltage-Max (Vsup) :
- 2.7V
- Address Bus Width :
- 15b
- Supply Voltage-Min (Vsup) :
- 2.5V
- Standby Current-Max :
- 0.004A
- Base Part Number :
- MT46V16M16
- Datasheets
- MT46V16M16CY-5B:M

Memory Micron Technology MT46V16M16CY-5B:M Overview
The Memory Micron Technology MT46V16M16CY-5B:M DRAM module is an essential component for high-performance computing and data processing systems. This 256Mbit DRAM, encapsulated in a compact 60FBGA package, is designed to deliver high-speed data transfer and low power consumption. Engineered by Micron Technology, a leader in advanced memory solutions, this product is tailored to meet the rigorous demands of modern electronics. Its efficient parallel interface ensures compatibility with a broad range of industrial and consumer applications, providing a reliable and scalable solution for system designers aiming to optimize their hardware configurations for maximum throughput and minimal latency.
MT46V16M16CY-5B:M Features
This high-capacity integrated circuit features a 256Mbit DRAM on a parallel interface, housed in a space-saving 60FBGA package. Its high-speed performance is suitable for demanding applications, including advanced computing and large-scale digital processing. The product's robust design ensures reliability and longevity in a variety of operating environments, making it an ideal choice for critical system components.
MT46V16M16CY-5B:M Applications
- Computing Systems: Utilized in desktops, laptops, and servers for enhanced memory capacity and faster processing speeds, enabling efficient handling of large workloads and multitasking.
- Consumer Electronics: Integrated into devices such as smart TVs and gaming consoles, where high memory bandwidth and quick access to data are crucial for optimal performance.
- Networking Equipment: Employed in routers and switches to manage data flow efficiently, ensuring smooth and reliable network performance even under high traffic conditions.
- Embedded Systems: Used in automotive and industrial machinery for real-time processing capabilities, aiding in faster decision-making and enhanced system control.
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