MT46V16M16CY-5B AIT:M
- Mfr.Part #
- MT46V16M16CY-5B AIT:M
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60FBGA
- Stock
- 1,650
- In Stock :
- 1,650
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Width :
- 8mm
- Height Seated (Max) :
- 1.2mm
- Operating Temperature :
- -40°C~85°C TA
- Surface Mount :
- yes
- Memory Size :
- 256Mb 16M x 16
- Organization :
- 16MX16
- Access Time :
- 700ps
- Qualification Status :
- Not Qualified
- Voltage - Supply :
- 2.3V~2.7V
- Supply Voltage-Max (Vsup) :
- 2.7V
- Terminal Pitch :
- 1mm
- Number of Terminations :
- 60
- ECCN Code :
- EAR99
- HTS Code :
- 8542.32.00.24
- Terminal Position :
- BOTTOM
- Additional Feature :
- AUTO/SELF REFRESH
- Length :
- 12.5mm
- Refresh Cycles :
- 8192
- I/O Type :
- COMMON
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 60-TFBGA
- Memory Density :
- 268435456 bit
- Operating Mode :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Clock Frequency :
- 200MHz
- Pin Count :
- 60
- Number of Functions :
- 1
- Packaging :
- Bulk
- Base Part Number :
- MT46V16M16
- JESD-609 Code :
- e1
- Factory Lead Time :
- 4 Weeks
- Memory Width :
- 16
- Output Characteristics :
- 3-STATE
- Number of Ports :
- 1
- Mounting Type :
- Surface Mount
- Standby Current-Max :
- 0.004A
- Interleaved Burst Length :
- 248
- Memory Interface :
- Parallel
- Write Cycle Time - Word, Page :
- 15ns
- Memory Type :
- Volatile
- Memory Format :
- DRAM
- Supply Voltage-Min (Vsup) :
- 2.5V
- JESD-30 Code :
- R-PBGA-B60
- Sequential Burst Length :
- 248
- Terminal Finish :
- Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Power Supplies :
- 2.6V
- Supply Current-Max :
- 0.175mA
- Supply Voltage :
- 2.6V
- Datasheets
- MT46V16M16CY-5B AIT:M

Memory Micron Technology MT46V16M16CY-5B AIT:M Overview
Introducing the MT46V16M16CY-5B AIT:M from Micron Technology, a high-performance IC DRAM that offers a robust storage solution for demanding applications. This 256Mbit DRAM utilizes a parallel interface encapsulated in a compact 60FBGA package, making it ideal for integration into a wide range of industrial and commercial devices. The Memory Micron Technology MT46V16M16CY-5B AIT:M is designed to meet the rigorous requirements of advanced computing systems, offering reliability and high-speed data processing capabilities that are essential for today's technology-driven environments.
MT46V16M16CY-5B AIT:M Features
This dynamic memory chip boasts several key features including a 256Mbit capacity, high data bandwidth, and low power consumption. Its parallel interface ensures efficient communication and data transfer speeds, supporting intensive applications without compromising performance. The 60FBGA packaging not only offers a reduction in physical space requirements but also enhances the thermal and electrical performance of the device.
MT46V16M16CY-5B AIT:M Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets, this DRAM enhances multitasking and improves the responsiveness of applications due to its quick data access capabilities.
- Gaming Consoles: The high-speed operation and large capacity of the MT46V16M16CY-5B AIT:M allow for enhanced graphics and smoother gameplay in modern gaming consoles.
- Automotive Systems: Applied in advanced driver-assistance systems (ADAS) and infotainment systems, this memory module supports the high data throughput and robustness required in automotive environments.
- Industrial Automation: Ideal for use in industrial control systems, this DRAM can handle complex processes and large datasets, crucial for real-time automation and control applications.
- Networking Equipment: In routers and switches, the MT46V16M16CY-5B AIT:M supports fast data transfer rates essential for managing high network traffic efficiently.
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