MT46V16M16CY-5B AAT:M
- Mfr.Part #
- MT46V16M16CY-5B AAT:M
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60FBGA
- Stock
- 9,364
- In Stock :
- 9,364
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Width :
- 16
- RoHS Status :
- ROHS3 Compliant
- Clock Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Pitch :
- 1mm
- Sequential Burst Length :
- 248
- Published :
- 2011
- Power Supplies :
- 2.6V
- HTS Code :
- 8542.32.00.24
- Supply Voltage :
- 2.6V
- Write Cycle Time - Word, Page :
- 15ns
- Supply Voltage-Max (Vsup) :
- 2.7V
- Number of Ports :
- 1
- Memory Size :
- 256Mb 16M x 16
- Terminal Position :
- BOTTOM
- Memory Format :
- DRAM
- JESD-30 Code :
- R-PBGA-B60
- Memory Type :
- Volatile
- Interleaved Burst Length :
- 248
- Length :
- 12.5mm
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Access Time :
- 700ps
- Packaging :
- Tray
- Standby Current-Max :
- 0.004A
- Organization :
- 16MX16
- I/O Type :
- COMMON
- Operating Mode :
- SYNCHRONOUS
- Memory Interface :
- Parallel
- Operating Temperature :
- -40°C~105°C TA
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 2.5V~2.7V
- Base Part Number :
- MT46V16M16
- Output Characteristics :
- 3-STATE
- Supply Current-Max :
- 0.175mA
- Number of Terminations :
- 60
- Memory Density :
- 268435456 bit
- Pin Count :
- 60
- Width :
- 8mm
- Refresh Cycles :
- 8192
- Number of Functions :
- 1
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Surface Mount :
- yes
- Height Seated (Max) :
- 1.2mm
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Additional Feature :
- AUTO/SELF REFRESH
- Screening Level :
- AEC-Q100
- JESD-609 Code :
- e1
- Package / Case :
- 60-TFBGA
- Supply Voltage-Min (Vsup) :
- 2.5V
- Datasheets
- MT46V16M16CY-5B AAT:M

[Memory Micron Technology MT46V16M16CY-5B AAT:M] Overview
Experience unparalleled memory performance with the MT46V16M16CY-5B AAT:M, a cutting-edge integrated circuit developed by Micron Technology. This 256MBIT parallel DRAM, housed in a 60FBGA package, redefines the standards of memory efficiency and reliability.
Designed to meet the demanding requirements of modern electronic devices, this IC delivers lightning-fast data access speeds and exceptional data storage capabilities. Its robust construction ensures stability even in the most challenging operating conditions, making it an ideal choice for industrial-grade applications.
Whether you're developing high-performance computing systems, networking equipment, or telecommunications devices, the MT46V16M16CY-5B AAT:M provides the reliability and performance you need to stay ahead of the competition.
MT46V16M16CY-5B AAT:M Features
- 256MBIT parallel DRAM
- Advanced 60FBGA package
- High-speed data access
- Exceptional data storage capabilities
- Robust construction for reliability
- Ideal for industrial-grade applications
MT46V16M16CY-5B AAT:M Applications
- Industrial Automation: Utilize the MT46V16M16CY-5B AAT:M in automated manufacturing processes, robotics, and control systems to ensure seamless operation and data integrity.
- Networking Infrastructure: Enhance the performance of routers, switches, and other networking equipment with the high-speed data access and storage capabilities of this IC.
- Telecommunications Systems: Power telecommunications infrastructure such as base stations, access points, and network gateways with the reliability and efficiency of the MT46V16M16CY-5B AAT:M.
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