MT46V128M4P-6T:D
- Mfr.Part #
- MT46V128M4P-6T:D
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 66TSOP
- Stock
- 46,897
- In Stock :
- 46,897
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Published :
- 2007
- Memory Size :
- 512Mb 128M x 4
- Moisture Sensitivity Level (MSL) :
- 4 (72 Hours)
- Access Time :
- 700ps
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Organization :
- 128MX4
- Supply Voltage :
- 2.5V
- Operating Temperature :
- 0°C~70°C TA
- RoHS Status :
- ROHS3 Compliant
- Memory Width :
- 4
- HTS Code :
- 8542.32.00.28
- Write Cycle Time - Word, Page :
- 15ns
- Pin Count :
- 66
- Length :
- 22.22mm
- Surface Mount :
- yes
- Number of Ports :
- 1
- Packaging :
- Tray
- Supply Voltage-Max (Vsup) :
- 2.7V
- Supply Current-Max :
- 0.405mA
- Height Seated (Max) :
- 1.2mm
- Memory Type :
- Volatile
- ECCN Code :
- EAR99
- Interleaved Burst Length :
- 248
- Number of Functions :
- 1
- Terminal Pitch :
- 0.65mm
- Refresh Cycles :
- 8192
- Memory Format :
- DRAM
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Operating Supply Voltage :
- 2.5V
- JESD-30 Code :
- R-PDSO-G66
- Base Part Number :
- MT46V128M4
- Clock Frequency :
- 167MHz
- I/O Type :
- COMMON
- Operating Mode :
- SYNCHRONOUS
- Voltage - Supply :
- 2.3V~2.7V
- Memory Interface :
- Parallel
- Lead Free :
- Lead Free
- Number of Terminations :
- 66
- JESD-609 Code :
- e3
- Supply Voltage-Min (Vsup) :
- 2.3V
- Output Characteristics :
- 3-STATE
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Sequential Burst Length :
- 248
- Width :
- 10.16mm
- Memory Density :
- 536870912 bit
- Standby Current-Max :
- 0.005A
- Qualification Status :
- Not Qualified
- Additional Feature :
- AUTO/SELF REFRESH
- Terminal Position :
- Dual
- Datasheets
- MT46V128M4P-6T:D

Memory Micron Technology MT46V128M4P-6T:D Overview
Experience unparalleled performance and reliability with the Memory Micron Technology MT46V128M4P-6T:D. Crafted by Micron Technology, a pioneer in semiconductor solutions, this IC DRAM 512MBIT PARALLEL 66TSOP offers exceptional memory capabilities for a diverse range of applications. Whether you're designing cutting-edge electronics or optimizing existing systems, this memory module delivers the speed, efficiency, and durability you need.
MT46V128M4P-6T:D Features
- High Performance: With advanced DRAM technology, this module delivers high-speed data processing for demanding applications.
- Reliability: Built with Micron's rigorous quality standards, you can trust this memory to perform consistently in critical environments.
- Compatibility: Designed to seamlessly integrate into various systems, ensuring smooth operation and easy implementation.
- Efficiency: Optimized for power efficiency, reducing energy consumption without compromising performance.
- Durability: Engineered to withstand harsh conditions, making it ideal for industrial and automotive applications.
MT46V128M4P-6T:D Applications
- Industrial Automation: Enhance the performance of industrial control systems, robotics, and manufacturing equipment with reliable and high-speed memory.
- Telecommunications: Power telecommunications infrastructure, including routers, switches, and base stations, with efficient and compatible memory solutions.
- Automotive Electronics: Improve the functionality of automotive electronics, such as infotainment systems, navigation units, and driver-assistance systems, with durable and reliable memory modules.
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