MT46V128M4P-5B:F
- Mfr.Part #
- MT46V128M4P-5B:F
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 66TSOP
- Stock
- 42,286
- In Stock :
- 42,286
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Mount :
- Surface Mount
- Data Bus Width :
- 4B
- Voltage - Supply :
- 2.5V~2.7V
- Number of Ports :
- 1
- Clock Frequency :
- 200MHz
- Memory Type :
- Volatile
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- HTS Code :
- 8542.32.00.28
- Operating Supply Voltage :
- 2.6V
- Memory Size :
- 512Mb 128M x 4
- Length :
- 22.22mm
- Address Bus Width :
- 15b
- Pin Count :
- 66
- Access Time :
- 700ps
- Nominal Supply Current :
- 195mA
- Lead Free :
- Lead Free
- Number of Functions :
- 1
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 4
- Interleaved Burst Length :
- 248
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Standby Current-Max :
- 0.005A
- Packaging :
- Tray
- Supply Voltage-Min (Vsup) :
- 2.5V
- Supply Voltage :
- 2.6V
- Organization :
- 128MX4
- Write Cycle Time - Word, Page :
- 15ns
- Operating Temperature :
- 0°C~70°C TA
- Memory Interface :
- Parallel
- Published :
- 2009
- Output Characteristics :
- 3-STATE
- Terminal Position :
- Dual
- Supply Voltage-Max (Vsup) :
- 2.7V
- RoHS Status :
- ROHS3 Compliant
- Density :
- 512 Mb
- Memory Format :
- DRAM
- Mounting Type :
- Surface Mount
- Refresh Cycles :
- 8192
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 66
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- ECCN Code :
- EAR99
- Number of Terminations :
- 66
- Additional Feature :
- AUTO/SELF REFRESH
- I/O Type :
- COMMON
- Sequential Burst Length :
- 248
- Terminal Pitch :
- 0.65mm
- Base Part Number :
- MT46V128M4
- Terminal Finish :
- MATTE TIN
- Datasheets
- MT46V128M4P-5B:F

Memory Micron Technology MT46V128M4P-5B:F Overview
The Memory Micron Technology MT46V128M4P-5B:F is a high-capacity, high-performance Integrated Circuit DRAM from Micron Technology, offering a robust 512Mbit density. This product is housed in a compact 66TSOP package, optimized for efficient parallel data processing that is crucial for advanced computing systems. With its state-of-the-art design, it enhances system reliability, provides substantial storage, and supports rapid access and processing of large amounts of data, making it ideal for demanding applications that require high speed and durability.
MT46V128M4P-5B:F Features
The MT46V128M4P-5B:F boasts a parallel interface which ensures high-speed data transfer rates and smooth operation in complex processes. Its 512Mbit density is well-suited for applications requiring substantial data storage without compromising on the physical space. The use of a 66TSOP package allows for efficient thermal management and reduces the overall footprint, facilitating easier integration into various electronic systems.
MT46V128M4P-5B:F Applications
- Computing Systems: Utilized in both personal and professional computing environments, providing the necessary DRAM for applications requiring rapid data access and high-volume storage.
- Servers: Integral for server memory, where large amounts of data are processed and stored temporarily, enhancing server speed and reliability.
- Telecommunications Equipment: Supports the processing needs of telecommunications infrastructure, ensuring efficient data flow and storage in communication networks.
- Embedded Systems: Applies to various embedded applications, offering memory solutions that contribute to the compactness and efficiency of integrated electronics.
- Gaming Consoles: Provides high-speed memory that enhances gaming experiences by enabling faster loading times and smoother gameplay.
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