MT46V128M4FN-75:D
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- Mfr.Part #
- MT46V128M4FN-75:D
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 11,263
- In Stock ：
- 11,263
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Lead Free :
- Contains Lead
- Organization :
- 128MX4
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Nominal Supply Current :
- 145mA
- Packaging :
- Tray
- Pin Count :
- 60
- Operating Mode :
- SYNCHRONOUS
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Supply Voltage :
- 2.5V
- Base Part Number :
- MT46V128M4
- Voltage - Supply :
- 2.3V~2.7V
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Clock Frequency :
- 133MHz
- Number of Terminations :
- 60
- Supply Voltage :
- 2.5V
- Number of Functions :
- 1
- Number of Ports :
- 1
- Terminal Pitch :
- 1mm
- Mount :
- Surface Mount
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Interleaved Burst Length :
- 248
- Address Bus Width :
- 15b
- Write Cycle Time - Word, Page :
- 15ns
- Length :
- 12.5mm
- Refresh Cycles :
- 8192
- I/O Type :
- COMMON
- Sequential Burst Length :
- 248
- Output Characteristics :
- 3-STATE
- Number of Pins :
- 60
- Access Time :
- 750ps
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Density :
- 512 Mb
- Standby Current-Max :
- 0.005A
- Supply Voltage-Max (Vsup) :
- 2.7V
- Published :
- 2007
- Memory Width :
- 4
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Peak Reflow Temperature (Cel) :
- 235
- ECCN Code :
- EAR99
- HTS Code :
- 8542.32.00.28
- Operating Temperature :
- 0°C~70°C TA
- Memory Type :
- Volatile
- Terminal Position :
- BOTTOM
- Supply Voltage-Min (Vsup) :
- 2.3V
- Memory Size :
- 512Mb 128M x 4
- Package / Case :
- 60-TFBGA
- Datasheets
- MT46V128M4FN-75:D
Memory Micron Technology MT46V128M4FN-75:D Overview
The Memory Micron Technology MT46V128M4FN-75:D is an advanced memory solution designed to meet the high-performance requirements of contemporary applications. Featuring a substantial 512Mbit DRAM capacity, this integrated circuit offers robust data storage and rapid access capabilities. Encased in a compact 60FBGA package, it ensures efficient space utilization and enhanced thermal management, making it ideal for high-density configurations. This product stands out for its reliability and scalability, essential for systems requiring high-speed data processing and significant memory capacity.
MT46V128M4FN-75:D Features
This DRAM IC is built with a parallel interface, providing the advantage of higher bandwidth through simultaneous data transfers. The integration into a 60FBGA package not only minimizes the physical footprint but also aids in better electrical performance and reduced power consumption. With its high capacity of 512Mbit, it is exceptionally well-suited for applications that demand substantial data storage and swift memory access.
MT46V128M4FN-75:D Applications
- Consumer Electronics: Utilized in devices such as digital cameras and gaming consoles, where high memory bandwidth and capacity are crucial for user experience and performance.
- Telecommunications: Integral for network routers and switches, providing the necessary speed and capacity to handle large volumes of data traffic efficiently.
- Automotive: Used in advanced driver-assistance systems (ADAS) to process real-time data from vehicle sensors, supporting functionalities like collision avoidance and automatic parking.
- Computing: Essential in PCs and servers for managing multiple applications and large datasets, ensuring smooth and efficient operation.
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