MT46V128M4BN-75:D
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- Mfr.Part #
- MT46V128M4BN-75:D
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 48,260
- In Stock ：
- 48,260
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Interface :
- Parallel
- Memory Format :
- DRAM
- Base Part Number :
- MT46V128M4
- Published :
- 2007
- Sequential Burst Length :
- 248
- Operating Mode :
- SYNCHRONOUS
- Additional Feature :
- AUTO/SELF REFRESH
- Standby Current-Max :
- 0.005A
- I/O Type :
- COMMON
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 0°C~70°C TA
- Supply Voltage-Min (Vsup) :
- 2.3V
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Interleaved Burst Length :
- 248
- Height Seated (Max) :
- 1.2mm
- Refresh Cycles :
- 8192
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Length :
- 12.5mm
- Number of Terminations :
- 60
- Terminal Pitch :
- 1mm
- Write Cycle Time - Word, Page :
- 15ns
- Organization :
- 128MX4
- Memory Type :
- Volatile
- Mounting Type :
- Surface Mount
- Width :
- 10mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Size :
- 512Mb 128M x 4
- Supply Voltage :
- 2.5V
- Memory Density :
- 536870912 bit
- Clock Frequency :
- 133MHz
- Pin Count :
- 60
- JESD-30 Code :
- R-PBGA-B60
- Terminal Position :
- BOTTOM
- Access Time :
- 750ps
- Output Characteristics :
- 3-STATE
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Number of Ports :
- 1
- Operating Supply Voltage :
- 2.5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- 60-TFBGA
- HTS Code :
- 8542.32.00.28
- Supply Voltage-Max (Vsup) :
- 2.7V
- Surface Mount :
- yes
- Number of Functions :
- 1
- Memory Width :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 2.3V~2.7V
- Datasheets
- MT46V128M4BN-75:D
Memory Micron Technology MT46V128M4BN-75:D Overview
Introducing the Memory Micron Technology MT46V128M4BN-75:D, a high-performance Integrated Circuit (IC) from Micron Technology, specifically designed to meet the robust needs of advanced digital systems. This DRAM module boasts a substantial 512 Mbit capacity and utilizes a parallel interface, all packaged compactly in a 60FBGA format. Ideal for applications demanding high-speed data transfer and substantial storage, this product ensures reliability and efficiency. Its design and build are suited for sophisticated systems that require precise and swift memory operations, making it a critical component in both commercial and industrial applications.
MT46V128M4BN-75:D Features
The MT46V128M4BN-75:D DRAM from Micron Technology is engineered with advanced features that enhance its performance and usability. Key features include a 512 Mbit density, which provides ample storage for complex processes, and a parallel interface that ensures high-speed data communication. The compact 60FBGA package is designed for optimized space utilization and improved thermal characteristics, which is crucial for maintaining system stability and performance under varying operational conditions.
MT46V128M4BN-75:D Applications
- Consumer Electronics: Utilized in devices such as high-definition television sets and gaming consoles, where large, rapid memory is crucial for user experience.
- Computing: Integral for PCs and servers, supporting complex computations and large-scale data processing with its high-speed, high-density memory capabilities.
- Mobile Devices: Employs in smartphones and tablets to manage multiple applications and user data efficiently, enhancing device responsiveness and functionality.
- Networking: Critical in routers and switches, where fast memory helps manage the high throughput and data-intensive operations required for network traffic management.
- Automotive: Used in advanced driver-assistance systems (ADAS) to process real-time data from vehicle sensors, aiding in safer and smarter vehicle functionalities.
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