MT46V128M4BN-6:D
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- Mfr.Part #
- MT46V128M4BN-6:D
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 14,162
- In Stock ：
- 14,162
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Current-Max :
- 0.405mA
- ECCN Code :
- EAR99
- Memory Density :
- 536870912 bit
- Height Seated (Max) :
- 1.2mm
- Terminal Position :
- BOTTOM
- HTS Code :
- 8542.32.00.28
- Number of Terminations :
- 60
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage-Min (Vsup) :
- 2.3V
- Length :
- 12.5mm
- Memory Interface :
- Parallel
- Supply Voltage-Max (Vsup) :
- 2.7V
- Standby Current-Max :
- 0.005A
- Number of Functions :
- 1
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Supply Voltage :
- 2.5V
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 2.5V
- Write Cycle Time - Word, Page :
- 15ns
- Clock Frequency :
- 167MHz
- Memory Width :
- 4
- Output Characteristics :
- 3-STATE
- Memory Size :
- 512Mb 128M x 4
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PBGA-B60
- Refresh Cycles :
- 8192
- Base Part Number :
- MT46V128M4
- Surface Mount :
- yes
- Width :
- 10mm
- Pin Count :
- 60
- Operating Temperature :
- 0°C~70°C TA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- I/O Type :
- COMMON
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Interleaved Burst Length :
- 248
- Additional Feature :
- AUTO/SELF REFRESH
- Organization :
- 128MX4
- Access Time :
- 700ps
- Terminal Pitch :
- 1mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Memory Type :
- Volatile
- Sequential Burst Length :
- 248
- Number of Ports :
- 1
- Packaging :
- Tray
- Voltage - Supply :
- 2.3V~2.7V
- Package / Case :
- 60-TFBGA
- Datasheets
- MT46V128M4BN-6:D
Memory Micron Technology MT46V128M4BN-6:D Overview
The Memory Micron Technology MT46V128M4BN-6:D is a high-performance IC DRAM featuring a 512Mbit capacity, optimized for applications requiring rapid access to large volumes of data. Manufactured by Micron Technology, this component utilizes advanced DRAM technology to offer exceptional speed and reliability. Its compact 60FBGA package ensures a minimal footprint, making it ideal for densely-packed PCB layouts. The product's robust design and efficient power management make it an excellent choice for designers looking to enhance system performance while maintaining energy efficiency.
MT46V128M4BN-6:D Features
This DRAM IC is designed for high-speed data retrieval and offers a variety of features that make it suitable for a broad range of applications. Key features include a parallel interface for increased data transfer speeds, a nominal supply voltage that supports low power consumption, and advanced packaging technology for improved thermal characteristics.
MT46V128M4BN-6:D Applications
- Computing Systems: Used in both personal computers and servers for enhancing processing speeds by providing rapid data buffer management.
- Networking Equipment: Integral for routers and switches, enabling efficient packet buffering to ensure smooth data transmission and low latency.
- Consumer Electronics: Applied in devices such as smart TVs and gaming consoles, where large memory bandwidth is crucial for multimedia processing and rendering.
- Mobile Devices: Helps in managing multiple applications simultaneously, enhancing multitasking capabilities in smartphones and tablets.
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