MT46H8M32LFB5-6:H
- Mfr.Part #
- MT46H8M32LFB5-6:H
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 90VFBGA
- Stock
- 7,362
- In Stock :
- 7,362
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Terminal Position :
- BOTTOM
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Additional Feature :
- AUTO/SELF REFRESH
- Base Part Number :
- MT46H8M32
- Terminal Finish :
- TIN SILVER COPPER
- Operating Supply Voltage :
- 1.8V
- Address Bus Width :
- 14b
- Pbfree Code :
- yes
- Height Seated (Max) :
- 1mm
- Organization :
- 8MX32
- Operating Temperature :
- 0°C~70°C TA
- Write Cycle Time - Word, Page :
- 12ns
- Access Time :
- 5ns
- Packaging :
- Tray
- Number of Pins :
- 90
- Lead Free :
- Lead Free
- Number of Terminations :
- 90
- Sequential Burst Length :
- 24816
- Length :
- 13mm
- Terminal Pitch :
- 0.8mm
- Supply Voltage :
- 1.8V
- Interleaved Burst Length :
- 24816
- Memory Size :
- 256Mb 8M x 32
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Width :
- 32
- Package / Case :
- 90-VFBGA
- Output Characteristics :
- 3-STATE
- Peak Reflow Temperature (Cel) :
- 260
- Number of Functions :
- 1
- Density :
- 256 Mb
- Supply Voltage-Min (Vsup) :
- 1.7V
- ECCN Code :
- EAR99
- Memory Interface :
- Parallel
- Memory Type :
- Volatile
- Standby Current-Max :
- 0.0003A
- Data Bus Width :
- 32b
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Supply :
- 1.7V~1.95V
- Supply Voltage-Max (Vsup) :
- 1.95V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Memory Format :
- DRAM
- HTS Code :
- 8542.32.00.24
- Nominal Supply Current :
- 120mA
- Pin Count :
- 90
- Clock Frequency :
- 166MHz
- Published :
- 2008
- Refresh Cycles :
- 4096
- I/O Type :
- COMMON
- Number of Ports :
- 1
- Datasheets
- MT46H8M32LFB5-6:H

Memory Micron Technology MT46H8M32LFB5-6:H Overview
The Memory Micron Technology MT46H8M32LFB5-6:H is a high-performance IC DRAM offering a substantial 256Mbit capacity, engineered to meet the demanding specifications of contemporary applications. Manufactured by Micron Technology, this device utilizes a parallel interface and is packaged in a compact 90VFBGA format, ensuring high-density and efficient integration into a variety of electronic systems. Its robust design and advanced technology make it an ideal solution for businesses looking to enhance their electronic products with reliable and powerful memory capabilities, encouraging bulk purchasing for volume-critical projects.
MT46H8M32LFB5-6:H Features
This DRAM module features a 256Mbit capacity with a parallel communication interface, which ensures rapid data transfer rates and superior performance. The compact 90VFBGA package not only minimizes space on the printed circuit board but also enhances thermal performance, making it suitable for high-speed computing environments. Additionally, the module's design is optimized for low power consumption, contributing to the overall energy efficiency of the systems it is integrated into.
MT46H8M32LFB5-6:H Applications
- Consumer Electronics: Utilized in devices such as digital cameras and gaming consoles, where large memory capacity and speed are necessary for user interface and data processing enhancements.
- Mobile Devices: Supports advanced mobile applications in smartphones and tablets, facilitating faster app performance and improved multitasking capabilities.
- Automotive Systems: Integrated into automotive infotainment systems, enhancing dashboard functionality and providing robust support for navigation and streaming services.
- Networking Equipment: Used in routers and switches to manage data throughput effectively, ensuring efficient network communication and reliability.
- Industrial Applications: Employs in automation systems and industrial PCs where high memory bandwidth and reliability are critical for complex process controls and operations.
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